A single-step lithography process for reconfigurable SiN photonics with TiN heaters and Al interconnects
Thermo-optic phase shifters are key building blocks in Silicon and Silicon Nitride-based reconfigurable photonic integrated circuits. They enable manipulating the phase of an optical signal by means of electrically-driven heating of an optical waveguide. Conventional fabrication schemes typically require dedicated lithographic steps to separately define the resistive heaters, the current transmission lines, and the electrical contact pads. This increases the process complexity and slows the standard complementary metal-oxide-semiconductor (CMOS) fabrication flows. In this work, we present a single-step lithographic process for the realization of Titanium Nitride thermo-optic phase shifters and Aluminum interconnects integrated on a Silicon Nitride photonic platform. A detailed electro-optical characterization, performed on two platforms operating at 810 nm and 1550 nm, revealed $\pi$-shift powers of 92 $\pm$ 2 mW and 120 $\pm$ 10 mW, respectively. Alongside, modulation bandwidths of 8.5 $\pm$ 0.3 kHz and 3.83 $\pm$ 0.03 kHz were extracted from combined frequency- and time-domain analyses. Our results demonstrate that the proposed single-step lithographic metal definition process represents a robust, viable and cost-efficient route towards CMOS-compatible reconfigurable Silicon Nitride photonics.