arXiv subjects

Alexander Rothstein

Publications and source records attributed to Alexander Rothstein.

10 recordsLinked to original sources

arXiv2026

Feasibility study of continuous electronic Pomeranchuk cooling with a flavor-degenerate Wigner crystal

Achieving sub-millikelvin electron temperatures in nanoelectronic devices could unveil new transport phenomena, extend quantum coherence times, and enhance the precision of quantum metrology. However, maintaining such low temperatures continuously remains a long-standing challenge. Here, we propose and simulate an on-chip cooling cycle that harnesses the entropy difference between an electron liquid (EL) and a Wigner crystal (WC) in flavor-degenerate flat-band materials. Cooling is driven by a current through a device with a locally gated region. Within this region, the charge carrier density is tuned such that a WC forms beneath the gate. As carriers transition from an EL to WC phase, their entropy increases, extracting heat and the sliding WC advects this heat along the device. The heat is then released when carriers transition back to the EL phase, which establishes distinct hot and cold regions and a steady temperature gradient over the device. Simulations show net cooling for sufficiently low current densities, typically below $1~\mathrm{nA}/\mu\mathrm{m}$, whereas Joule heating dominates at higher currents. Within the gated region, we estimate cooling powers of up to $8.4~\mathrm{aW}/\mu\mathrm{m}$ at a bath temperature of $4~\mathrm{mK}$. Our approach can achieve electron temperatures well below $1~\mathrm{mK}$ under suitable conditions, promising a route towards continuous on-chip cooling in this temperature regime. Our approach applies to any flat-band material with low-energy flavor degeneracy (valley and/or orbital) and low disorder, including gapped Bernal-stacked bilayer graphene, rhombohedral-stacked multilayer graphene, and magic-angle twisted bilayer graphene.

cond-mat.mes-hall↗

arXiv2025

Tailoring hBN's Phonon Polaritons with the Plasmonic Phase-Change Material In3SbTe2

Polaritons in van-der-Waals materials (vdWM) promise high confinement and multiple tailoring options by optical structures, e.g., resonators, launching structures and lenses. These optical structures are conventionally fabricated using cumbersome multi-process lithography techniques. In contrast, phase-change materials (PCMs) offer fast and reconfigurable programming of optical structures. PCMs can reversibly be switched between two stable phases with distinct permittivities by local heating, e.g., by optical laser pulses. While the well-known dielectric PCM GeSbTe-alloys feature only a permittivity change, the PCM In3SbTe2 can be switched between a dielectric and metallic phase. This makes In3SbTe2 promising for programming metallic launching structures. Here, we demonstrate direct optical programming and thereby rapid prototyping of optical launching structures in In3SbTe2 to tailor and confine polaritons in vdWM. We combine the vdWM hexagonal boron nitride (hBN) with In3SbTe2 and optically program circular resonators for hBN's phonon polaritons through hBN into In3SbTe2. We investigate the polariton resonators with near-field optical microscopy. Demonstrating the reconfigurability, we decrease the resonator diameter to increase the polariton confinement. Finally, we fabricate focusing structures for hBN's phonon polaritons whose focal point is changed in a second post-processing step. We promote In3SbTe2 as a versatile platform for rapid prototyping of polariton optics in vdWM.

physics.optics↗

arXiv2024

Gate-defined single-electron transistors in twisted bilayer graphene

Twisted bilayer graphene (tBLG) near the magic angle is a unique platform where the combination of topology and strong correlations gives rise to exotic electronic phases. These phases are gate-tunable and related to the presence of flat electronic bands, isolated by single-particle band gaps. This enables gate-controlled charge confinement, essential for the operation of single-electron transistors (SETs), and allows to explore the interplay of confinement, electron interactions, band renormalisation and the moir\'e superlattice, potentially revealing key paradigms of strong correlations. Here, we present gate-defined SETs in near-magic-angle tBLG with well-tunable Coulomb blockade resonances. These SETs allow to study magnetic field-induced quantum oscillations in the density of states of the source-drain reservoirs, providing insight into gate-tunable Fermi surfaces of tBLG. Comparison with tight-binding calculations highlights the importance of displacement-field-induced band renormalisation crucial for future advanced gate-tunable quantum devices and circuits in tBLG including e.g. quantum dots and Josephson junction arrays.

cond-mat.mes-hall↗

arXiv2024

Super-resolution imaging of nanoscale inhomogeneities in hBN-covered and encapsulated few-layer graphene

Encapsulating few-layer graphene (FLG) in hexagonal boron nitride (hBN) can cause nanoscale inhomogeneities in the FLG, including changes in stacking domains and topographic defects. Due to the diffraction limit, characterizing these inhomogeneities is challenging. Recently, the visualization of stacking domains in encapsulated four-layer graphene (4LG) has been demonstrated with phonon polariton (PhP)-assisted near-field imaging. However, the underlying coupling mechanism and ability to image subdiffractional-sized inhomogeneities remain unknown. Here, we retrieve direct replicas and magnified images of subdiffractional-sized inhomogeneities in hBN-covered trilayer graphene (TLG) and encapsulated 4LG, enabled by the hyperlensing effect. This hyperlensing effect is mediated by hBN's hyperbolic PhP that couple to the FLG's plasmon polaritons. Using near-field microscopy, we identify the coupling by determining the polariton dispersion in hBN-covered TLG to be stacking-dependent. Our work demonstrates super-resolution and magnified imaging of inhomogeneities, paving the way for the realization of homogeneous encapsulated FLG transport samples to study correlated physics.

physics.optics↗

arXiv2024

Negative electronic compressibility in charge islands in twisted bilayer graphene

We report on the observation of negative electronic compressibility in twisted bilayer graphene for Fermi energies close to insulating states. To observe this negative compressibility, we take advantage of naturally occurring twist angle domains that emerge during the fabrication of the samples, leading to the formation of charge islands. We accurately measure their capacitance using Coulomb oscillations, from which we infer the compressibility of the electron gas. Notably, we not only observe the negative electronic compressibility near correlated insulating states at integer filling, but also prominently near the band insulating state at full filling, located at the edges of both the flat- and remote bands. Furthermore, the individual twist angle domains yield a well-defined carrier density, enabling us to quantify the strength of electronic interactions and verify the theoretical prediction that the inverse negative capacitance contribution is proportional to the average distance between the charge carriers. A detailed analysis of our findings suggests that Wigner crystallization is the most likely explanation for the observed negative electronic compressibility.

cond-mat.mes-hall↗

arXiv2024

Band gap formation in commensurate twisted bilayer graphene/hBN moir\'e lattices

We report on the investigation of periodic superstructures in twisted bilayer graphene (tBLG) van-der-Waals heterostructures, where one of the graphene layers is aligned to hexagonal boron nitride (hBN). Our theoretical simulations reveal that if the ratio of the resulting two moir\'e unit cell areas is a simple fraction, the graphene/hBN moir\'e lattice acts as a staggered potential, breaking the degeneracy between tBLG AA sites. This leads to additional band gaps at energies where a subset of tBLG AA sites is fully occupied. These gaps manifest as Landau fans in magnetotransport, which we experimentally observe in an aligned tBLG/hBN heterostructure. Our study demonstrates the identification of commensurate tBLG/hBN van-der-Waals heterostructures by magnetotransport, highlights the persistence of moir\'e effects on length scales of tens of nanometers, and represents an interesting step forward in the ongoing effort to realise designed quantum materials with tailored properties.

cond-mat.mes-hall↗

arXiv2023

Spin and Charge Fluctuation Induced Pairing in ABCB Tetralayer Graphene

Motivated by the recent experimental realization of ABCB stacked tetralayer graphene [Wirth et al., ACS Nano 16, 16617 (2022)], we study correlated phenomena in moir\'e-less graphene tetralayers for realistic interaction profiles using an orbital resolved random phase approximation approach. We demonstrate that magnetic fluctuations originating from local interactions are crucial close to the van Hove singularities on the electron- and hole-doped side promoting layer selective ferrimagnetic states. Spin fluctuations around these magnetic states enhance unconventional spin-triplet, valley-singlet superconductivity with $f$-wave symmetry due to intervalley scattering. Charge fluctuations arising from long range Coulomb interactions promote doubly degenerate p-wave superconductivity close to the van Hove singularities. At the conduction band edge of ABCB graphene, we find that both spin and charge fluctuations drive $f$-wave superconductivity. Our analysis suggests a strong competition between superconducting states emerging from long- and short-ranged Coulomb interactions and thus stresses the importance of microscopically derived interaction profiles to make reliable predictions for the origin of superconductivity in graphene based heterostructures.

cond-mat.supr-con↗

arXiv2022

Experimental observation of ABCB stacked tetralayer graphene

In tetralayer graphene, three inequivalent layer stackings should exist, however, only rhombohedral (ABCA) and Bernal (ABAB) stacking have so far been observed. The three stacking sequences differ in their electronic structure, with the elusive third stacking (ABCB) being unique as it is predicted to exhibit an intrinsic bandgap as well as locally flat bands around the K points. Here, we use scattering-type scanning near-field optical microscopy and confocal Raman microscopy to identify and characterize domains of ABCB stacked tetralayer graphene. We differentiate between the three stacking sequences by addressing characteristic interband contributions in the optical conductivity between 0.28 and 0.56 eV with amplitude and phase-resolved near-field nano-spectroscopy. By normalizing adjacent flakes to each other, we achieve good agreement between theory and experiment, allowing for the unambiguous assignment of ABCB domains in tetralayer graphene. These results establish near-field spectroscopy at the interband transitions as a semi-quantitative tool, enabling the recognition of ABCB domains in tetralyer graphene flakes and therefore, providing a basis to study correlation physics of this exciting phase.

cond-mat.mes-hall↗

arXiv2020

Tunable interdot coupling in few-electron bilayer graphene double quantum dots

We present a highly controllable double quantum dot device based on bilayer graphene. Using a device architecture of interdigitated gate fingers, we can control the interdot tunnel coupling between 1 to 4 GHz and the mutual capacitive coupling between 0.2 and 0.6 meV, independently of the charge occupation of the quantum dots. The charging energy and hence the dot size remains nearly unchanged. The tuning range of the tunnel coupling covers the operating regime of typical silicon and GaAs spin qubit devices.

cond-mat.mes-hall↗

arXiv2020

Electron-hole crossover in gate-controlled bilayer graphene quantum dots

Electron and hole Bloch states in gapped bilayer graphene exhibit topological orbital magnetic moments with opposite signs near the band edges, which allows for tunable valley-polarization in an out-of-plane magnetic field. This intrinsic property makes electron and hole quantum dots (QDs) in bilayer graphene interesting for valley and spin-valley qubits. Here we show measurements of the electron-hole crossover in a bilayer graphene QD, demonstrating the opposite sign of the orbital magnetic moments associated with the Berry curvature. Using three layers of metallic top gates, we independently control the tunneling barriers of the QD while tuning the occupation from the few-hole regime to the few-electron regime, crossing the displacement-field controlled band gap. The band gap is around 25 meV, while the charging energies of the electron and hole dots are between 3-5 meV. The extracted valley g-factor is around 17 and leads to opposite valley polarization for electron and hole states at moderate B-fields. Our measurements agree well with tight-binding calculations for our device.

cond-mat.mes-hall↗