arXiv subjects

Alexander Maeder

Publications and source records attributed to Alexander Maeder.

11 recordsLinked to original sources

arXiv2026

Ab initio Modeling of MoS2/Oxide Device Interfaces with Machine Learned Electronic Structures

We introduce a new ab initio approach to simulate semiconductor devices that integrates scalable machine-learned (ML) electronic structure models with an advanced quantum transport (QT) solver. The developed framework enables 10,000X speedups over density functional theory to produce the Hamiltonian matrix of devices made of >20,000 atoms, while offering high prediction accuracy. We use its unique features to investigate MoS2/oxide samples and single-layer MoS2 field-effect transistors, where the surrounding oxide layers, here, HfO2 or Al2O3, are explicitly included into the QT domain. In particular, we reveal that the presence of undercoordinated metal atoms (Hf or Al) close to the semiconductor-oxide interface significantly affects the magnitude of the electronic current and its propagation through MoS2.

cond-mat.mtrl-sci↗

arXiv2026

Simulation of exchange coupling effects in double quantum dot FinFET-like structures

By leveraging a GPU-accelerated Schr\"odinger-Poisson (SP) solver, we characterize exchange coupling in a hole spin double-qubit device involving a double quantum dot (DQD) system formed inside a 5-gate silicon fin field-effect transistor (FinFET) similar to real experimental structures. The self-consistent SP simulations rely on a finite difference discretization of the 3D volume and on a Luttinger-Kohn 6x6 kp Hamiltonian accounting for magnetic fields and strain distribution. They return the gate-induced confined electronic states and the corresponding electrostatic potential hosting the DQD. These quantities serve as inputs to a two-particle Hamiltonian that is constructed from single-particle Slater determinants through the configuration interaction (CI) method. By diagonalizing this two-particle Hamiltonian, the eigenstates and eigenenergies of the DQD system are obtained, together with their exchange coupling. We show that our simulation framework, using a reduced number of basis states, is capable of reproducing the magneto-electrostatic behavior of the devices of interest, as predicted from theory and observed experimentally. We finally leverage our approach to determine the optimal operating conditions of a two-qubit quantum logic gate implemented in a Si FinFET structure.

quant-ph↗

arXiv2026

MALOQ: Massively Accelerated Learning of Operators for Quantum Transport

Machine-learned (ML) operator models can be trained to predict density functional theory (DFT) Hamiltonian/density matrices at significantly reduced computational cost, thus extending electronic-structure calculations to previously unfeasible scales. Here, we introduce MALOQ (Massively Accelerated Learning of Operators for Quantum Transport), an application built to train on and predict electronic-structure matrices for systems made of few to 100k atoms, described by large basis sets, and covering a wide range of atomic elements. Based on a state-of-the-art, SO(2)-equivariant backbone architecture, MALOQ provides (i) custom data-processing kernels to handle high-rank Hamiltonian matrix data and (ii) a scalable edge-wise distribution of atomic graph(s). Trained on the largest molecular Hamiltonian datasets available today, it reduces time-per-epoch by over 30% compared to a molecule-wise-distributed framework, and enables inference on material graphs of arbitrary size. We demonstrate scalable training and inference for 3,000-12,000 atoms on the Alps supercomputer, up to 192 GPUs and 256 GPUs, respectively.

cs.LG↗

arXiv2026

EmuGEMM: Fused Tensor Core Kernels for Precision Emulation in Matrix Multiplication

Modern GPUs devote an increasing silicon budget to low-precision matrix-multiplication units, widening the precision-throughput gap for scientific computing workloads. Ozaki Schemes I and II offer an alternative by reconstructing high-precision general matrix multiplication (GEMM) from low-precision operations, yet existing implementations leave substantial performance untapped. In particular, intermediate results are repeatedly materialized in global memory, making data movement the dominant bottleneck. We present EmuGEMM, fused integer Tensor Core kernels for NVIDIA Hopper and Blackwell GPUs that eliminate redundant memory round-trips in both Ozaki schemes. Using Scheme I, EmuGEMM sustains up to 1,639 Top/s on Hopper (83% of INT8 peak) and 3,654 Top/s on Blackwell (81%). For large matrices, EmuGEMM surpasses cuBLAS TF32 throughput by up to 1.4x on Hopper and 1.7x on Blackwell, at comparable accuracy. Using Scheme II, EmuGEMM extends to complex arithmetic and outperforms cuBLAS ZGEMM by up to 2.3x on Hopper and 5.5x on Blackwell.

cs.DC↗

arXiv2026

Optimizing Semiconductor Device Simulations through Low-Precision Arithmetic

Architectural changes in GPUs, especially the promotion of low-precision computational units, pose significant challenges to traditional, FP64-based high-performance computing (HPC) applications, while also presenting opportunities. Adopting reduced-precision data formats is a promising avenue to exploit the increased throughput capabilities. However, straightforward data conversions may lead to degraded accuracy or even erroneous results. For a given application, only an in-depth analysis of its numerical stability can reveal the potential of low-precision arithmetic. In this work, we consider the open-source quatrex package, a quantum transport solver capable of breaking the sustained FP64 Eflop/s barrier, to illustrate trade-offs between accuracy losses and computational speed-ups when moving from high- to low-precision formats. We use three representative benchmark structures to explore the application's numerical properties. Applying the gained insights to a larger, more realistic system, we achieve up to 51% higher throughput while maintaining accurate results, on 40% fewer HPC resources than the FP64 reference.

cs.CE↗

arXiv2026

Acceleration of Atomistic NEGF: Algorithms, Parallelization, and Machine Learning

The Non-equilibrium Green's function (NEGF) formalism is a particularly powerful method to simulate the quantum transport properties of nanoscale devices such as transistors, photo-diodes, or memory cells, in the ballistic limit of transport or in the presence of various scattering sources such as electronphonon, electron-photon, or even electron-electron interactions. The inclusion of all these mechanisms has been first demonstrated in small systems, composed of a few atoms, before being scaled up to larger structures made of thousands of atoms. Also, the accuracy of the models has kept improving, from empirical to fully ab-initio ones, e.g., density functional theory (DFT). This paper summarizes key (algorithmic) achievements that have allowed us to bring DFT+NEGF simulations closer to the dimensions and functionality of realistic systems. The possibility of leveraging graph neural networks and machine learning to speed up ab-initio device simulations is discussed as well.

cond-mat.mtrl-sci↗

arXiv2025

Ab-initio Quantum Transport with the GW Approximation, 42,240 Atoms, and Sustained Exascale Performance

Designing nanoscale electronic devices such as the currently manufactured nanoribbon field-effect transistors (NRFETs) requires advanced modeling tools capturing all relevant quantum mechanical effects. State-of-the-art approaches combine the non-equilibrium Green's function (NEGF) formalism and density functional theory (DFT). However, as device dimensions do not exceed a few nanometers anymore, electrons are confined in ultra-small volumes, giving rise to strong electron-electron interactions. To account for these critical effects, DFT+NEGF solvers should be extended with the GW approximation, which massively increases their computational intensity. Here, we present the first implementation of the NEGF+GW scheme capable of handling NRFET geometries with dimensions comparable to experiments. This package, called QuaTrEx, makes use of a novel spatial domain decomposition scheme, can treat devices made of up to 84,480 atoms, scales very well on the Alps and Frontier supercomputers (>80% weak scaling efficiency), and sustains an exascale FP64 performance on 42,240 atoms (1.15 Eflop/s).

cs.DC↗

arXiv2025

Distributed Equivariant Graph Neural Networks for Large-Scale Electronic Structure Prediction

Equivariant Graph Neural Networks (eGNNs) trained on density-functional theory (DFT) data can potentially perform electronic structure prediction at unprecedented scales, enabling investigation of the electronic properties of materials with extended defects, interfaces, or exhibiting disordered phases. However, as interactions between atomic orbitals typically extend over 10+ angstroms, the graph representations required for this task tend to be densely connected, and the memory requirements to perform training and inference on these large structures can exceed the limits of modern GPUs. Here we present a distributed eGNN implementation which leverages direct GPU communication and introduce a partitioning strategy of the input graph to reduce the number of embedding exchanges between GPUs. Our implementation shows strong scaling up to 128 GPUs, and weak scaling up to 512 GPUs with 87% parallel efficiency for structures with 3,000 to 190,000 atoms on the Alps supercomputer.

cs.LG↗

arXiv2025

Learning the Electronic Hamiltonian of Large Atomic Structures

Graph neural networks (GNNs) have shown promise in learning the ground-state electronic properties of materials, subverting ab initio density functional theory (DFT) calculations when the underlying lattices can be represented as small and/or repeatable unit cells (i.e., molecules and periodic crystals). Realistic systems are, however, non-ideal and generally characterized by higher structural complexity. As such, they require large (10+ Angstroms) unit cells and thousands of atoms to be accurately described. At these scales, DFT becomes computationally prohibitive, making GNNs especially attractive. In this work, we present a strictly local equivariant GNN capable of learning the electronic Hamiltonian (H) of realistically extended materials. It incorporates an augmented partitioning approach that enables training on arbitrarily large structures while preserving local atomic environments beyond boundaries. We demonstrate its capabilities by predicting the electronic Hamiltonian of various systems with up to 3,000 nodes (atoms), 500,000+ edges, ~28 million orbital interactions (nonzero entries of H), and $\leq$0.53% error in the eigenvalue spectra. Our work expands the applicability of current electronic property prediction methods to some of the most challenging cases encountered in computational materials science, namely systems with disorder, interfaces, and defects.

cond-mat.mtrl-sci↗

arXiv2024

Electron-Electron Interactions in Device Simulation via Non-equilibrium Green's Functions and the GW Approximation

The continuous scaling of metal-oxide-semiconductor field-effect transistors (MOSFETs) has led to device geometries where charged carriers are increasingly confined to ever smaller channel cross sections. This development is associated with reduced screening of long-range Coulomb interactions. To accurately predict the behavior of such ultra-scaled devices, electron-electron (e-e) interactions must be explicitly incorporated in their quantum transport simulation. In this paper, we present an \textit{ab initio} atomistic simulation framework based on density functional theory, the non-equilibrium Green's function formalism, and the self-consistent GW approximation to perform this task. The implemented method is first validated with a carbon nanotube test structure before being applied to calculate the transfer characteristics of a silicon nanowire MOSFET in a gate-all-around configuration. As a consequence of e-e scattering, the energy and spatial distribution of the carrier and current densities both significantly change, while the on-current of the transistor decreases owing to the Coulomb repulsion between the electrons. Furthermore, we demonstrate how the resulting bandgap modulation of the nanowire channel as a function of the gate-to-source voltage could potentially improve the device performance. To the best of our knowledge, this study is the first one reporting large-scale atomistic quantum transport simulations of nano-devices under non-equilibrium conditions and in the presence of e-e interactions within the GW approximation.

cond-mat.mes-hall↗

arXiv2024

Influence of Carrier-Carrier Interactions on the Sub-threshold Swing of Band-to-Band Tunnelling Transistors

Band-to-band tunnelling field-effect transistors (TFETs) have long been considered as promising candidates for future low-power logic applications. However, fabricated TFETs rarely reach sub-60 mV/dec sub-threshold swings (SS) at room temperature. Previous theoretical studies identified Auger processes as possible mechanisms for the observed degradation of SS. Through first-principles quantum transport simulations incorporating carrier-carrier interactions within the Non-equilibrium Green's Function formalism and self-consistent GW approximation, we confirm here that Auger processes are indeed at least partly responsible for the poor performance of TFETs. Using a carbon nanotube TFET as testbed, we show that carrier-carrier scattering alone significantly increases the OFF-state current of these devices, thus worsening their sub-threshold behavior.

cond-mat.mes-hall↗