arXiv subjects

Alexander Grill

Publications and source records attributed to Alexander Grill.

7 recordsLinked to original sources

arXiv2026

Understanding oxide-thickness-dependent variability in dense Si-MOS quantum dot arrays

Achieving uniform and scalable control of semiconductor spin qubits remains a key challenge for large scale quantum computing. In this work, we investigate how gate oxide thickness influences uniformity in dense two dimensional silicon quantum dot arrays. Using a 7 x 7 array fabricated in a 300 mm CMOS-process patterned by EUV lithography, we statistically characterize 392 quantum dots across four different oxide thicknesses. The threshold voltages, capacitances, lever arms, and charging energies are extracted using parallel row based measurements and we identify an optimal SiO2 thickness of 17 nm that minimizes threshold voltage variability below 63 mV standard deviation. Our observations illustrate how multiple sources of disorder can introduce competing oxide-thickness dependencies, resulting in non-monotonic trends. These results provide key design guidelines for dense, scalable silicon spin qubit architectures.

quant-ph↗

arXiv2026

CryoCMOS RF multiplexer for superconducting qubit control, readout and flux biasing at millikelvin temperatures with picowatt power consumption

Large-scale cryogenic quantum systems are constrained by an input-output bottleneck between room-temperature electronics and millikelvin stages, particularly in superconducting qubit platforms. This bottleneck is most acute for output lines, where bulky and expensive microwave components limit scalability. A promising approach for scalable characterization and testing is to perform signal multiplexing directly at the qubit plane. We demonstrate a cryogenic CMOS (cryoCMOS) RF multiplexer operating at 10 millikelvin with record-low static power consumption of 200 pW. The device provides < 2 dB insertion loss and > 30 dB isolation across DC-8 GHz. Direct connection to transmon qubits marginally affects coherence times in the range of 100 microseconds, enabling multiplexing of readout, flux and, in principle, XY drive lines. This work introduces cryoCMOS multiplexers as valuable tools for scalable, high-throughput cryogenic characterization and testing, and advances co-integrated quantum-classical control for future large-scale quantum processors.

quant-ph↗

arXiv2025

Investigation of Low Frequency Noise in CryoCMOS devices through Statistical Single Defect Spectroscopy

High 1/f noise in CryoCMOS devices is a critical parameter to keep under control in the design of complex circuits for low temperatures applications. Current models predict the 1/f noise to scale linearly with temperature, and gate oxide defects are expected to freeze out at cryogenic temperatures. Nevertheless, it has been repeatedly observed that 1/f noise deviates from the predicted behaviour and that gate oxide defects are still active around 4.2 K, producing random telegraph noise. In this paper, we probe single gate oxide defects in 2500 nMOS devices down to 5 K in order to investigate the origin of 1/f noise in CryoCMOS devices. From our results, it is clear that the number of defects active at cryogenic temperatures resulting in random telegraph noise is larger than at 300 K. Threshold voltage shifts due to charged defects are shown to be exponentially distributed, with different modalities across temperatures and biases: from monomodal at 300 K to trimodal below 100 K. The third mode is interpreted in the framework of percolation theory. By fitting these distributions, it is shown that more than 80% of the detected defects belongs to the oxide bulk. Afterwards, starting from the raw data in time domain, we reconstruct the low frequency noise spectra, highlighting the contributions of defects belonging to different branches and, therefore, to different oxide layers. This analysis shows that, although interface traps and large defects associated with the third mode are the main sources of 1/f noise at 5 K, bulk oxide defects still contribute significantly to low-frequency noise at cryogenic temperatures. Finally, we show that defect time constants and step heights are uncorrelated, proving that elastic tunnelling model for charge trapping is not accurate.

cond-mat.mes-hall↗

arXiv2022

Comphy v3.0 -- A Compact-Physics Framework for Modeling Charge Trapping Related Reliability Phenomena in MOS Devices

Charge trapping plays an important role for the reliability of electronic devices and manifests itself in various phenomena like bias temperature instability (BTI), random telegraph noise (RTN), hysteresis or trap-assisted tunneling (TAT). In this work we present Comphy v3.0, an open source physical framework for modeling these effects in a unified fashion using nonradiative multiphonon theory on a one-dimensional device geometry. Here we give an overview about the underlying theory, discuss newly introduced features compared to the original Comphy framework and also review recent advances in reliability physics enabled by these new features. The usefulness of Comphy v3.0 for the reliability community is highlighted by several practical examples including automatic extraction of defect distributions, modeling of TAT in high-k capacitors and BTI/RTN modeling at cryogenic temperatures.

physics.app-ph↗

arXiv2022

Physics-Based and Closed-Form Model for Cryo-CMOS Subthreshold Swing

Cryogenic semiconductor device models are essential in designing control systems for quantum devices and in benchmarking the benefits of cryogenic cooling for high-performance computing. In particular, the saturation of subthreshold swing due to band tails is an important phenomenon to include in low-temperature analytical MOSFET models as it predicts theoretical lower bounds on the leakage power and supply voltage in tailored cryogenic CMOS technologies with tuned threshold voltages. Previous physics-based modeling required to evaluate functions with no closed-form solutions, defeating the purpose of fast and efficient model evaluation. Thus far, only the empirically proposed expressions are in closed form. This article bridges this gap by deriving a physics-based and closed-form model for the full saturating trend of the subthreshold swing from room down to low temperature. The proposed model is compared against experimental data taken on some long and short devices from a commercial 28-nm bulk CMOS technology down to 4.2 K.

cond-mat.mes-hall↗

arXiv2022

Overcoming I/O bottleneck in superconducting quantum computing: multiplexed qubit control with ultra-low-power, base-temperature cryo-CMOS multiplexer

Large-scale superconducting quantum computing systems entail high-fidelity control and readout of large numbers of qubits at millikelvin temperatures, resulting in a massive input-output bottleneck. Cryo-electronics, based on complementary metal-oxide-semiconductor (CMOS) technology, may offer a scalable and versatile solution to overcome this bottleneck. However, detrimental effects due to cross-coupling between the electronic and thermal noise generated during cryo-electronics operation and the qubits need to be avoided. Here we present an ultra-low power radio-frequency (RF) multiplexing cryo-electronics solution operating below 15 mK that allows for control and interfacing of superconducting qubits with minimal cross-coupling. We benchmark its performance by interfacing it with a superconducting qubit and observe that the qubit's relaxation times ($T_1$) are unaffected, while the coherence times ($T_2$) are only minimally affected in both static and dynamic operation. Using the multiplexer, single qubit gate fidelities above 99.9%, i.e., well above the threshold for surface-code based quantum error-correction, can be achieved with appropriate thermal filtering. In addition, we demonstrate the capability of time-division-multiplexed qubit control by dynamically windowing calibrated qubit control pulses. Our results show that cryo-CMOS multiplexers could be used to significantly reduce the wiring resources for large-scale qubit device characterization, large-scale quantum processor control and quantum error correction protocols.

quant-ph↗

arXiv2020

Millikelvin temperature cryo-CMOS multiplexer for scalable quantum device characterisation

Quantum computers based on solid state qubits have been a subject of rapid development in recent years. In current Noisy Intermediate-Scale Quantum (NISQ) technology, each quantum device is controlled and characterised though a dedicated signal line between room temperature and base temperature of a dilution refrigerator. This approach is not scalable and is currently limiting the development of large-scale quantum system integration and quantum device characterisation. Here we demonstrate a custom designed cryo-CMOS multiplexer operating at 32 mK. The multiplexer exhibits excellent microwave properties up to 10 GHz at room and millikelvin temperatures. We have increased the characterisation throughput with the multiplexer by measuring four high-quality factor superconducting resonators using a single input and output line in a dilution refrigerator. Our work lays the foundation for large-scale microwave quantum device characterisation and has the perspective to address the wiring problem of future large-scale quantum computers.

quant-ph↗