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Akilan K

Publications and source records attributed to Akilan K.

3 recordsLinked to original sources

Interface-Controlled Spin-Orbit Torques in Rare-Earth Synthetic Ferrimagnets Probed by Sagnac Magneto-Optics and Harmonic Hall Measurements

Spin-orbit torque (SOT) provides an efficient route for manipulating magnetization in spintronic devices, and its accurate quantification is essential. Here, we investigate Co/Gd-based synthetic ferrimagnets using complementary magnetotransport and magneto-optical techniques. We use a Sagnac magneto-optical interferometry method to directly quantify current-induced magnetization tilting and extract the damping-like SOT effective field. The Sagnac measurements show good agreement with harmonic Hall analysis across different Co/Gd and Gd/Pt/Co heterostructures, providing a quantitative determination of the damping-like SOT effective field that does not rely on electrical transport signatures. By varying the Gd thickness and multilayer stacking order, we demonstrate that the damping-like torque is strongly influenced by spin transport and angular momentum conversion at rare-earth and heavy-metal interfaces. The observation of a finite torque in Gd/Pt/Co/Pt structures, where conventional Pt spin Hall contributions are expected to compensate, highlights the active role of the Gd layer in SOT generation. Furthermore, interface engineering enables perpendicular magnetic anisotropy in Gd/Pt/Co/Al heterostructures with a 2-nm-thick Co layer, allowing current-induced SOT switching at current densities of 8-10 MA/cm$^2$. These results establish rare-earth-based synthetic ferrimagnets as a versatile platform for engineering spin-orbit phenomena and optimizing low-power spintronic devices.

cond-mat.mtrl-sci

Enhanced spin-to-charge conversion in La$_{0.67}$Sr$_{0.33}$MnO$_3$/NdNiO$_3$ bilayers at the nickelate metal-insulator phase transition

Phase transition materials such as NdNiO3 (NNO) when coupled with low damping ferromagnets such as La$_{0.67}$Sr$_{0.33}$MnO$_3$ (LSMO) can lead to new multi-functional material systems harnessing the interplay of charge, spin and orbital degrees of freedom. In this study, we probe the evolution of the spin-to-charge conversion in epitaxial all-oxide LSMO (12 nm)/NNO (4, 8, and 16 nm) bilayers. Using spin pumping ferromagnetic resonance we track the spin-charge conversion in the NNO layer through the paramagnetic metal to antiferromagnetic insulator transition and observe a pronounced enhancement of the inverse spin Hall effect signal at the onset of this transition. We attribute this enhancement to the electronic and magnetic disorder in NNO at the first-order phase transition, thereby providing insights into the mechanism of spin transport through the phase transition. The tunability of spin charge conversion in this low damping bilayer system offers a pathway for developing multifunctional, energy-efficient spintronic devices.

cond-mat.mtrl-sci

Temperature dependent spin dynamics in La$_{0.67}$Sr$_{0.33}$MnO$_3$/Pt bilayers

Complex ferromagnetic oxides such as La$_{0.67}$Sr$_{0.33}$MnO$_3$ (LSMO) offer pathways for creating energy efficient spintronic devices with new functionalities. LSMO exhibits high-temperature ferromagnetism, half metallicity, sharp resonance linewidth, low damping and a large anisotropic magnetoresistance response. Combined with Pt, a proven material with high spin-charge conversion efficiency, LSMO can be used to create robust nano-oscillators for neuromorphic computing. Ferromagnetic resonance (FMR) and device level spin-pumping FMR measurements are performed to investigate the magnetization dynamics and spin transport in NdGaO3(110)/LSMO(15 nm)/Pt(0 and 5 nm) thin films ranging from 300K to 90K and compare the device performance with Py(7 nm)/Pt(5 nm) sample. The spin current pumped into Pt is quantified to determine the temperature dependent influence of interfacial interactions. The generated spin current in the micro-device is maximum at 170K for the optimally grown LSMO/Pt films. Additionally, this bilayer system exhibits low magnetic Gilbert damping (0.002), small linewidth (12 Oe) and a large spin Hall angle ($\approx$ 3.2%) at 170K. By fine-tuning the LSMO/Pt interface quality and integrating it into the device structure, the system exhibits a fourfold enhancement in signal output for LSMO/Pt devices compared to the Pt/Py system. Such robust device level performance can pave way for energy-efficient spintronic based devices.

cond-mat.mtrl-sci