arXiv subjects

Ahmedullah Aziz

Publications and source records attributed to Ahmedullah Aziz.

At least 19 recordsLinked to original sources

arXiv2026

STEMPix: A Phase-Transition-Material-Based Pixel Sensor for Resolving Edge-Movement Direction

This paper proposes a spatio-temporal edge-movement direction pixel (STEMPix) for generating compact direction-aware edge movement information inside a CMOS-compatible image sensor array. The proposed design targets specialized sensing applications where local boundary movement is more important than full-frame intensity reconstruction. Instead of transferring full multi-bit frames for external processing, STEMPix generates a 3-bit local edge direction code (LEDC) by combining pixel-level temporal change information with neighboring-pixel spatial edge information. We design the architecture using a two-tier organization, where the photodiode layer is separated from the computation layer to preserve light-collection area while accommodating the additional in-array processing circuitry. The proposed circuit is evaluated through HSPICE transient simulations. The estimated implementation achieves a horizontal pitch of 1.73 {\mu}m, a vertical pitch of 2.36 {\mu}m, and a geometric fill factor of 95.47%. The average active switching energy is 0.465 fJ per LEDC operation across representative edge-movement cases. The proposed STEMPix operation also supports global-shutter capture and dynamic thresholding. These results indicate that STEMPix can provide a compact and scalable front-end representation for edge-movement-aware sensing systems.

cs.ET↗

arXiv2026

Electrostatic Influence of Diamond Heat-Spreaders on GaN FET Performance

Diamond, with its exceptional thermal conductivity, is widely explored as a heat spreader to improve thermal management in GaN-based power and RF electronics. In this work, we use Sentaurus TCAD to model AlGaN/GaN HEMTs with integrated diamond heat spreaders, incorporating advanced physical models such as thermal boundary resistance (TBR) and temperature-dependent bandgap narrowing. While diamond significantly enhances heat dissipation, our simulations reveal an important but often overlooked tradeoff: electrostatic modulation at the diamond and semiconductor interface. We initially modeled a p-GaN HEMT with all-around diamond integration and show agreement to the experimentally reported electrothermal benefits of diamond heat spreader integration. However, we observe strong band bending at the diamond/GaN interface alongside electric field generation and increased valence band energy in diamond. As a result, an interfacial hole accumulation region forms at the GaN surface, altering vertical transport and hindering current injection which prevents high on-state current. These results indicate that although diamond improves thermal performance, it can also actively influence the electrostatics of the transistor. To address both the elevated TBR and the undesired interfacial band bending, we propose the incorporation of an engineered interlayer. Building on our Sentaurus TCAD results, we develop a Silvaco TCAD TLM test structure to characterize the extent of the hole accumulation region formation and give insight to future studies on mitigation through interlayer development.

physics.app-ph↗

arXiv2026

ThermoPix: A High-Spatial-Resolution ElectronicPhotonic Temperature Sensor Array With Microsecond Row Readout

This paper presents ThermoPix, a CMOS-compatible electronic-photonic architecture for high-spatial-resolution temperature sensing. The proposed system converts temperature-induced wavelength shifts in a photonic interferometric sensor into timing information that can be processed by CMOS circuitry. We use a valley photonic crystal Mach-Zehnder interferometer (VPCMZI) as the sensing element, whose temperature-dependent spectral response is detected using an integrated waveguide photodetector and translated into a time-varying photocurrent. A CMOS readout circuit employing a phase-transition-material device performs threshold detection and generates a timing signal corresponding to the temperature-dependent crossing event. Circuit-level simulations demonstrate a temperature sensitivity of 3.15 ns/K, a row readout time of 2 us, and a sensing power-delay product (PDP) of 0.152 fJ. The required optical power per photonic cell is 150 nW, enabling energy-efficient array operation without requiring cooling or special environmental arrangements. We also present alternative photonic layer architectures for optical power distribution across the array. In one approach, we use different tap ratios along the row, while the other uses identical tap ratios with bidirectional excitation. The resulting average photonic cell pitches are 23.26 um and 38.52 um, respectively. The proposed ThermoPix architecture therefore provides a scalable platform for integrated temperature sensing arrays that combine photonic sensing elements with CMOS-compatible timing-based readout.

cs.ET↗

arXiv2026

Non-volatile superconducting tunnelling magnetoresistance memory enabled by exchange-field gap engineering

Scalable, low-dissipation memory operating below 4 K is a critical requirement for superconducting and quantum computing systems. Existing cryogenic memory technologies rely on CMOS derivatives or hybrid architectures that incur leakage, refresh overhead or limited compatibility with superconducting logic. Here we demonstrate a superconducting tunnelling magnetoresistance device that functions as a non-volatile cryogenic memory element across the full superconducting temperature range. By integrating a de Gennes spin valve with a superconducting tunnel junction in a current perpendicular-to-plane geometry, we realise exchange-field control of the superconducting energy gap. This produces two magnetically switchable gap voltages and robust quasiparticle tunnelling magnetoresistance down to 0.25 K.The device operates at millivolt bias with nanowatt-level read power and zero standby dissipation. Its vertical junction architecture and Nb-based materials platform enable compatibility with superconducting logic and scalable cryogenic memory arrays.

cond-mat.supr-con↗

arXiv2026

Lightweight True In-Pixel Encryption with FeFET Enabled Pixel Design for Secure Imaging

Ensuring end-to-end security in image sensors has become essential as visual data can be exposed through multiple stages of the imaging pipeline. Advanced protection requires encryption to occur before pixel values appear on any readout lines. This work introduces a secure pixel sensor (SecurePix), a compact CMOS-compatible pixel architecture that performs true in-pixel encryption using a symmetric key realized through programmable, non-volatile multidomain polarization states of a ferroelectric field-effect transistor. The pixel and array operations are designed and simulated in HSPICE, while a 45 nm CMOS process design kit is used for layout drawing. The resulting layout confirms a pixel pitch of 2.33 x 3.01 um^2. Each pixel's non-volatile programming level defines its analog transfer characteristic, enabling the photodiode voltage to be converted into an encrypted analog output within the pixel. Full-image evaluation shows that ResNet-18 recognition accuracy drops from 99.29 percent to 9.58 percent on MNIST and from 91.33 percent to 6.98 percent on CIFAR-10 after encryption, indicating strong resistance to neural-network-based inference. Lookup-table-based inverse mapping enables recovery for authorized receivers using the same symmetric key. Based on HSPICE simulation, the SecurePix achieves a per-pixel programming power-delay product of 17 uW us and a per-pixel sensing power-delay product of 1.25 uW us, demonstrating low-overhead hardware-level protection.

cs.CV↗

arXiv2026

A Review of Multiscale Thermal Modeling in Heterogeneous 3D ICs

Thermal behavior has become a first-order constraint in advanced 2.5D/3D integrated circuits (ICs) and heterogeneous packages. As power densities rise and multiple active dies are vertically integrated, heat removal paths become constricted, elevating junction temperatures, magnifying temperature gradients, and exacerbating reliability risks. This review synthesizes the physical mechanisms, modeling assumptions, and analysis methods that govern multiscale thermal transport in 3D ICs, with emphasis on interface-dominated conduction, material anisotropy, and strong electrothermal coupling. We unify device-to-system scales into a coherent framework, analyzing trade-offs among compact thermal models (CTMs), finite element/finite difference methods (FEM/FDM), Green's function and semi-analytical techniques, reduced-order and multi-fidelity methods, and physics-informed machine learning (PIML), while highlighting the central role of thermal boundary resistance (TBR) and variability in thermal interface materials (TIMs), the pitfalls of decoupled electrical/thermal analyses, and the need for rigorous validation against measurements. Finally, we outline practical design guidelines and a forward-looking research agenda that integrates physics-based modeling, data-driven surrogates, and in situ sensing to enable thermally aware co-optimization across the IC-package-system hierarchy.

cs.AR↗

arXiv2026

Predictive first-principles simulations for co-designing next-generation energy-efficient AI systems

In modern generative-AI workloads, matrix-vector/matrix-matrix multiplications (\emph{MatMul}) dominate the compute and energy cost. Achieving dramatic reductions in energy per token therefore requires a novel, specialized hardware that is co-designed across materials, devices, interconnects, circuits, and architectures rather than optimized at any single layer in isolation. In this \emph{Perspectives} article, we argue that \emph{predictive} (first-principles, fitting-parameter-free) device and interconnect simulations can close the loop between nanoscale physics and workload-level metrics, enabling the identification of device/interconnect operating regimes that plausibly support \emph{orders-of-magnitude} improvements in energy efficiency of AI accelerators.

cond-mat.other↗

arXiv2025

Analog-to-Digital Converter Based on Voltage-controlled Superconducting Device

The increasing demand for cryogenic electronics in superconducting and quantum computing systems calls for ultra energy efficient data conversion architectures that remain functional at deep cryogenic temperatures.In this work, we present the first design of a voltage-controlled superconducting flash analog-to-digital converter (ADC) based on a novel quantum enhanced Josephson junction field effect transistor (JJFET).Exploiting its strong gate tunability and transistor-like behavior, the JJFET offers a scalable alternative to conventional current controlled superconducting devices while aligning naturally with CMOS style design methodologies.Building on our previously developed Verilog A compact model calibrated to experimental data, we design and simulate a three bit JJFET based flash ADC.The core comparator block is realized through careful bias current selection and augmented with a three terminal nanocryotron to precisely define reference voltages.Cascaded JJFET comparators ensure robust voltage gain, cascadability, and logic level restoration across stages.Simulation results demonstrate accurate quantization behavior with ultra-low power dissipation, underscoring the feasibility of voltage driven superconducting mixed signal circuits.This work establishes a critical step toward unifying superconducting logic and data conversion, paving the way for scalable cryogenic architectures in quantum classical co-processors, low-power AI accelerators, and next generation energy constrained computing platforms.

cond-mat.supr-con↗

arXiv2025

Reimagining Voltage-Controlled Cryogenic Boolean Logic Paradigm with Quantum-Enhanced Josephson Junction FETs

The growing demand for ultra low power computing and the emergence of quantum technologies have intensified interest in cryogenic electronics, particularly superconducting devices. Despite their promise, current controlled superconducting components face fundamental challenges in cascadability, limiting their effectiveness in complex logic architectures. To overcome this, recent efforts have focused on developing gate tunable superconducting devices, such as Josephson junction field effect transistors (JJFETs). However, achieving robust control and sufficient supercurrent gain, both critical for transistor-like performance in logic circuits remains a key challenge. A recent advancement in JJFET design, based on InAs and GaSb heterostructures, demonstrates enhanced gain and favorable device characteristics suitable for circuit integration. Building on this innovation, we propose and analyze fundamental voltage controlled logic topologies using the quantum enhanced JJFET. We develop a Verilog A based circuit compatible compact model of the quantum enhanced JJFET which accurately captures the experimentally observed device characteristics. To ensure cascadability, our logic circuits incorporate the multilayered Heater Nanocryotron (nTron), a superconducting nanowire-based thermal switch. Through simulation based analysis, we demonstrate the successful implementation of fundamental logic gates, including NOT, NAND, and NOR. Furthermore, we design a 3 input majority gate, which plays a pivotal role in quantum and reversible computing due to its universality. Finally, to demonstrate the cascadability of our proposed logic topology, we demonstrate the operation of a 2 input XOR gate based on our designed JJFET based NOT, NAND, and NOR gate.

cs.ET↗

arXiv2025

Injection Locking and Coupling Dynamics in Superconducting Nanowire based Cryogenic Oscillators

Oscillators designed to function at cryogenic temperatures play a critical role in superconducting electronics and quantum computing by providing stable, low noise signals with minimal energy loss.Here we present a comprehensive numerical study of injection locking and mutual coupling dynamics in superconducting nanowire based cryogenic oscillators.Using the design space of standalone ScNW based oscillator, we investigate two critical mechanisms that govern frequency synchronization and signal coordination in cryogenic computing architectures.First, an injection locking induced by an external AC signal with a frequency near the oscillators natural frequency, and second, the mutual coupling dynamics between two ScNW oscillators under varying coupling strengths.We identify key design parameters such as shunt resistance, nanowire inductance, and coupling strength that govern the locking range.Additionally, we examine how the amplitude of the injected signal affects the amplitude of the locked oscillation, offering valuable insights for power aware oscillator synchronization.Furthermore, we analyze mutual synchronization between coupled ScNW oscillators using capacitive and resistive coupling elements.Our results reveal that the phase difference between oscillators can be precisely controlled by tuning the coupling strength, enabling programmable phase encoded information processing.These findings could enable building ScNW based oscillatory neural networks, synchronized cryogenic logic blocks, and on chip cryogenic resonator arrays.

cs.ET↗

arXiv2025

Embedding-Enhanced Probabilistic Modeling of Ferroelectric Field Effect Transistors (FeFETs)

FeFETs hold strong potential for advancing memory and logic technologies, but their inherent randomness arising from both operational cycling and fabrication variability poses significant challenges for accurate and reliable modeling. Capturing this variability is critical, as it enables designers to predict behavior, optimize performance, and ensure reliability and robustness against variations in manufacturing and operating conditions. Existing deterministic and machine learning-based compact models often fail to capture the full extent of this variability or lack the mathematical smoothness required for stable circuit-level integration. In this work, we present an enhanced probabilistic modeling framework for FeFETs that addresses these limitations. Building upon a Mixture Density Network (MDN) foundation, our approach integrates C-infinity continuous activation functions for smooth, stable learning and a device-specific embedding layer to capture intrinsic physical variability across devices. Sampling from the learned embedding distribution enables the generation of synthetic device instances for variability-aware simulation. With an R2 of 0.92, the model demonstrates high accuracy in capturing the variability of FeFET current behavior. Altogether, this framework provides a scalable, data-driven solution for modeling the full stochastic behavior of FeFETs and offers a strong foundation for future compact model development and circuit simulation integration.

cs.LG↗

arXiv2025

Multi-Domain FeFET-Based Pixel for In-Sensor Multiply-and-Accumulate Operations

This paper presents an FeFET-based active pixel sensor that performs in-sensor multiply-and-accumulate (MAC) operations by leveraging the multi-domain polarization states of ferroelectric layers. The proposed design integrates a programmable FeFET into a 3-transistor pixel circuit, where the FeFET's non-volatile conductance encodes the weight, and the photodiode voltage drop encodes the input. Their interaction generates an output current proportional to the product, enabling in-pixel analog multiplication. Accumulation is achieved by summing output currents along shared column lines, realizing full MAC functionality within the image sensor array. Extensive HSPICE simulations, using 45 nm CMOS models, validate the operation and confirm the scalability of the design. This compact and power-efficient architecture minimizes data movement, making it ideal for real-time edge computing, neuromorphic vision, and secure sensing applications.

eess.IV↗

arXiv2025

Energy-Efficient Cryogenic Neuromorphic Network with Superconducting Memristor

Cryogenic neuromorphic systems, inspired by the brains unparalleled efficiency, present a promising paradigm for next generation computing architectures.This work introduces a fully integrated neuromorphic framework that combines superconducting memristor(SM) based spiking neurons and synapse topologies to achieve a low power neuromorphic network with non volatile synaptic strength.This neurosynaptic framework is validated by implementing the cart pole control task, a dynamic decision making problem requiring real time computation.Through detailed simulations, we demonstrate the network's ability to execute this task with an average fitness of 5965 timesteps across 1000 randomized test episodes, with 40 percent achieving the target fitness of 15,000 timesteps (0.02s per timestep).The system achieves 23 distinct spiking rates across neurons, ensuring efficient information encoding.Our findings establish the potential of SM based cryogenic neuromorphic systems to address the energy and scalability limitations of traditional computing, paving the way for biologically inspired, ultra low power computational frameworks.

cs.ET↗

arXiv2024

A Review on Digital Pixel Sensors

Digital pixel sensor (DPS) has evolved as a pivotal component in modern imaging systems and has the potential to revolutionize various fields such as medical imaging, astronomy, surveillance, IoT devices, etc. Compared to analog pixel sensors, the DPS offers high speed and good image quality. However, the introduced intrinsic complexity within each pixel, primarily attributed to the accommodation of the ADC circuit, engenders a substantial increase in the pixel pitch. Unfortunately, such a pronounced escalation in pixel pitch drastically undermines the feasibility of achieving high-density integration, which is an obstacle that significantly narrows down the field of potential applications. Nonetheless, designing compact conversion circuits along with strategic integration of 3D architectural paradigms can be a potential remedy to the prevailing situation. This review article presents a comprehensive overview of the vast area of DPS technology. The operating principles, advantages, and challenges of different types of DPS circuits have been analyzed. We categorize the schemes into several categories based on ADC operation. A comparative study based on different performance metrics has also been showcased for a well-rounded understanding.

cs.CV↗

arXiv2024

In-Pixel Foreground and Contrast Enhancement Circuits with Customizable Mapping

This paper presents an innovative in-pixel contrast enhancement circuit that performs image processing directly within the pixel circuit. The circuit can be tuned for different modes of operation. In foreground enhancement mode, it suppresses low-intensity background pixels to nearly zero, isolating the foreground for better object visibility. In contrast enhancement mode, it improves overall image contrast. The contrast enhancement function is customizable both during the design phase and in real-time, allowing the circuit to adapt to specific applications and varying lighting conditions. A model of the designed pixel circuit is developed and applied to a full pixel array, demonstrating significant improvements in image quality. Simulations performed in HSPICE show a nearly 6x increase in Michelson Contrast Ratio (CR) in the foreground enhancement mode. The simulation results indicate its potential for real-time, adaptive contrast enhancement across various imaging environments.

cs.CV↗

arXiv2024

Energy-Efficient Cryogenic Ternary Content Addressable Memory using Ferroelectric SQUID

Ternary content addressable memories (TCAMs) are useful for certain computing tasks since they allow us to compare a search query with a whole dataset stored in the memory array. They can also unlock unique advantages for cryogenic applications like quantum computing, high-performance computing, and space exploration by improving speed and energy efficiency through parallel searching. This paper explores the design and implementation of a cryogenic ternary content addressable memory based on ferroelectric superconducting quantum interference devices (FeSQUIDs). The use of FeSQUID for designing the TCAM provides several unique advantages. First, we can get binary decisions (zero or non-zero voltage) for matching and mismatching conditions without using any peripheral circuitry. Moreover, the proposed TCAM needs ultra-low energy (1.36 aJ and 26.5 aJ average energy consumption for 1-bit binary and ternary search, respectively), thanks to the use of energy-efficient SQUIDs. Finally, we show the efficiency of FeSQUID through the brain-inspired application of Hyperdimensional Computing (HDC). Here, the FeSQUID-based TCAM implements the associative memory to support the highly parallel search needed in the inference step. We estimate an energy consumption of 89.4 fJ per vector comparison using a vector size of 10,000 bits. We also compare the FeSQUID-based TCAM array with the 5nm FinFET-based cryogenic SRAM-based TCAM array and observe that the proposed FeSQUID-based TCAM array consumes over one order of magnitude lower energy while performing the same task.

cs.ET↗

arXiv2024

Harnessing Ferro-Valleytricity in Penta-Layer Rhombohedral Graphene for Memory and Compute

Two-dimensional materials with multiple degrees of freedom, including spin, valleys, and orbitals, open up an exciting avenue for engineering multifunctional devices. Beyond spintronics, these degrees of freedom can lead to novel quantum effects such as valley-dependent Hall effects and orbital magnetism, which could revolutionize next-generation electronics. However, achieving independent control over valley polarization and orbital magnetism has been a challenge due to the need for large electric fields. A recent breakthrough involving penta-layer rhombohedral graphene has demonstrated the ability to individually manipulate anomalous Hall signals and orbital magnetic hysteresis, forming what is known as a valley-magnetic quartet. Here, we leverage the electrically tunable Ferro-valleytricity of penta-layer rhombohedral graphene to develop non-volatile memory and in-memory computation applications. We propose an architecture for a dense, scalable, and selector-less non-volatile memory array that harnesses the electrically tunable ferro-valleytricity. In our designed array architecture, non-destructive read and write operations are conducted by sensing the valley state through two different pairs of terminals, allowing for independent optimization of read/write peripheral circuits. The power consumption of our PRG-based array is remarkably low, with only ~ 6 nW required per write operation and ~ 2.3 nW per read operation per cell. This consumption is orders of magnitude lower than that of the majority of state-of-the-art cryogenic memories. Additionally, we engineer in-memory computation by implementing majority logic operations within our proposed non-volatile memory array without modifying the peripheral circuitry. Our framework presents a promising pathway toward achieving ultra-dense cryogenic memory and in-memory computation capabilities.

cond-mat.mes-hall↗

arXiv2023

Machine Learning-powered Compact Modeling of Stochastic Electronic Devices using Mixture Density Networks

The relentless pursuit of miniaturization and performance enhancement in electronic devices has led to a fundamental challenge in the field of circuit design and simulation: how to accurately account for the inherent stochastic nature of certain devices. While conventional deterministic models have served as indispensable tools for circuit designers, they fall short when it comes to capture the subtle yet critical variability exhibited by many electronic components. In this paper, we present an innovative approach that transcends the limitations of traditional modeling techniques by harnessing the power of machine learning, specifically Mixture Density Networks (MDNs), to faithfully represent and simulate the stochastic behavior of electronic devices. We demonstrate our approach to model heater cryotrons, where the model is able to capture the stochastic switching dynamics observed in the experiment. Our model shows 0.82% mean absolute error for switching probability. This paper marks a significant step forward in the quest for accurate and versatile compact models, poised to drive innovation in the realm of electronic circuits.

cs.LG↗