arXiv subjects

Ahamed Raihan

Publications and source records attributed to Ahamed Raihan.

2 recordsLinked to original sources

arXiv2026

Scandium diboride: a semi-metallic, lattice, thermally matched substrate for vertical AlGaN power electronics

We report the properties of hexagonal (space group P6/mmm) scandium diboride ($\mathrm{ScB}_2$) single crystals grown by a laser diode floating zone method at growth rates of ~1mm/hr under B-rich conditions with (002) rocking curve widths $Δω$=38'' approaching the quality of commercial SiC/GaN substrates. Lattice expansion measurements reveal matching to $\mathrm{Al_{0.55}Ga_{0.45}N}$ with a coefficient of thermal expansion ~5ppm/K at typical AlGaN growth temperatures, enabling thick AlGaN layers for ultra-wide bandgap (UWBG) power electronics >1kV. We measure semi-metallic room temperature resistivity ~15$μΩ$ cm, climbing to ~93$μΩ$ cm at 773K with a $T^2$ dependence effectively eliminating substrate parasitic resistance, the limiting factor in exploiting the full potential of UWBG. The Debye temperature $θ_{D,ScB_2}$ from heat capacity and lattice expansion is ~850K well matched to $θ_{D,ScB_2}$, but lower than the 1100K measured for Sc-rich growth conditions. We discuss Debye matching as a key substrate codesign criterion providing significant overlap in phonon modes for heat removal and thermal matching during AlGaN growth. The competitive thermal conductivity at room temperature 53W/mK is half that from full first principles calculations, a discrepancy we attribute to the presence of Sc-vacancies generated by B-rich growth. while the resistivity is ~2x the theoretical value, indicating that both electrons and phonons play equal role in thermal transport. The smooth ~2.5nm rms roughness surface enables advanced heat removal modalities through engineered phonon bridges and phonon polaritons in $\mathrm{ScB}_2$/AlGaN interfacial heterostructures, potentially allowing ~10-100x increase in power handling over state-of-the-art GaN/SiC.

cond-mat.mtrl-sci↗

arXiv2026

Crystal growth and characterization of the ultra-high temperature substrate $\mathrm{Ta_{1-x}Hf_{x}C_{0.5}}$

Incorporation of $\mathrm{Al_{y}Ga_{1-y}N}$ (AGN) semiconductors into high power electronics offers efficiency improvements in power transmission, generation, and use, if approaches to eliminate the defects arising from film-lattice mismatch can be established. Here, we report the optical floating zone crystal growth of $\mathrm{Ta_{1-x}Hf_{x}C_{0.5}}$ (x = 0.2), a new metallic substrate material family lattice matched to the ultra-wide-band-gap, Al-rich side (y = 0.91) of the AGN solid solution. Laue diffraction demonstrates large single crystal domains in the as-grown boule. Single crystal x-ray diffraction at T = 213 K in conjunction with first principles calculations shows that the material adopts a layered crystal structure with AA-type stacking of (Ta/Hf)-C-(Ta/Hf) trilayers described in the trigonal space group P-3m1 (#164), with a = 3.1168(4) Å, c = 4.9644(4) Å, and $β$ = 120.0°. X-ray photoelectron spectroscopy (XPS) measurements show the Hf:Ta ratio to be close to the nominal value of 0.8:0.2 in the grown crystal. Density Functional Theory calculations reveal that this structure is stabilized by the low energy of carbon-vacancy formation of a hypothetical $\mathrm{(Ta/Hf)_{1}C_{1}}$ anti-NiAs structure type, and imply flexibility in interface structure with an overlayer nitride film. A surface preparation/polishing procedure is developed that reduces root mean square (RMS) surface roughness from as-cut 130 nm to 7 nm as measured by atomic force microscopy. Scanning electron microscopy shows the presence of a native surface oxide, removed by polishing, along with carbon-rich pits. Time-domain thermoreflectance measurements show a room temperature thermal conductivity of $κ$ = 18.1(4) W m-1 K-1. These results provide key first steps for utilizing metallic, lattice matched, substrates for the growth of Al-rich AGN semiconductors.

cond-mat.mtrl-sci↗