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A. Gerber

Publications and source records attributed to A. Gerber.

At least 19 recordsLinked to original sources

Hydrogen-Induced Sign Reversal in Magnetic Hysteresis Evolution of CoPd Alloys and Co/Pd Multilayers

Hydrogen absorption in magnetic thin film nanostructures can modulate their electronic, magnetic, and transport properties by modifying the electronic structure and lattice strain. However, the influence of composition and nanostructuring on these two competing effects is not well understood. We systematically investigate hydrogen-induced magnetic hysteresis in Co$_x$Pd$_{100-x}$ alloys, [Co(0.1 nm)/Pd(d)]$_{15}$, and [Co(0.2 nm)/Pd(d)]$_{15}$ multilayers, using extraordinary Hall effect characterizations (EHE) in air and 4% H$_2$/N$_2$ mixture. We show that the hydrogen-induced response is not universal, but depends strongly on composition and layer thickness. This reflects competition between Pd-related electronic effects and magnetoelastic anisotropy. In Pd-rich CoPd alloys and Co(0.2 nm)/Pd multilayers, hydrogen initially contracts the hysteresis loops at low Co fractions, followed by loop expansion above x ~ 40%. This contrast results from competition between suppression of Pd-induced magnetization through Pd-4d band filling and hydrogen-driven anisotropic strain that strengthens magnetoelastic anisotropy in Co-rich samples. In contrast, in ultrathin [Co(0.1 nm)/Pd(d)]$_{15}$ multilayers, hydrogen induces a weak, non-monotonic but generally expanding loop behaviour across x = 15-60%, indicating a dominant role of interfacial magnetic connectivity and strain-mediated magnetoelastic anisotropy in the ultrathin limit. Furthermore, we observe a hydrogen-induced reversal of the EHE loop polarity near the crossover regime, reflecting a change in the dominant EHE scattering mechanisms, thus providing an additional degree of magnetic tunability by hydrogen. These results demonstrate that hydrogen can selectively tune the magnetism of CoPd nanostructures via composition-controlled electronic and magnetoelastic effects, offering insights for hydrogen-responsive spintronic and sensing devices.

cond-mat.mtrl-sci

Resistivity testing of palladium dilution limits in CoPd alloys for hydrogen storage

Palladium satisfies most of the requirements for an effective hydrogen storage material with two major drawbacks: it has a relatively low gravimetric hydrogen density and is prohibitively expensive for large-scale applications. Pd-based alloys should be considered as possible alternatives to a pure Pd. The question is how much one can dilute the Pd concentration in a variety of candidate materials while preserving hydrogen absorption capability. We demonstrate that the resistivity measurements of thin-film alloy samples can be used for a qualitative high-throughput screening and study of the hydrogen-absorbing properties over the entire range of palladium concentrations. Contrary to palladium-rich alloys where additional hydrogen scattering indicates a degree of hydrogen content, the diluted alloy films respond by a decrease of resistance due to their thickness expansion. Evidence of significant hydrogen absorption was found in thin CoPd films diluted to just 20% of Pd.

cond-mat.mtrl-sci

Kinetics of the lattice response to hydrogen absorption in thin Pd and CoPd films

Hydrogen can penetrate reversibly a number of metals, occupy the interstitial sites and cause large expansion of the crystal lattice. The question discussed here is whether the kinetics of the structural response matches hydrogen absorption. We show that thin Pd and CoPd films exposed to a relatively rich hydrogen atmosphere (4% H2) inflate irreversibly, demonstrate the controllable shape memory, and duration of the process can be orders of magnitude longer than hydrogen absorption. The dynamics of the out-of-equilibrium plastic creep is well described by the Avrami - type model of the nucleation and lateral domain wall expansion of the swelled sites.

cond-mat.mtrl-sci

Detection of hydrogen by the extraordinary Hall effect in CoPd alloys

Effect of hydrogen adsorption on the extraordinary Hall phenomenon (EHE) in ferromagnetic CoPd films is studied as a function of composition, thickness, substrate and hydrogen concentration in atmosphere. Adsorption of hydrogen adds a positive term in the extraordinary Hall effect coefficient and modifies the perpendicular magnetic anisotropy with the respective changes in coercivity and remanence of hysteresis loops. Hydrogen sensitive compositions are within the Co concentration range 20% < x < 50% with the strongest response near the EHE polarity reversal point x_0 ~ 38%. Depending on the film composition and field of operation the EHE response of CoPd to low concentration hydrogen can reach hundreds percent, which makes the method and the material attractive for hydrogen sensing.

cond-mat.mtrl-sci

Hall effect spintronics for gas detection

We present the concept of magnetic gas detection by the Extraordinary Hall effect (EHE). The technique is compatible with the existing conductometric gas detection technologies and allows simultaneous measurement of two independent parameters: resistivity and magnetization affected by the target gas. Feasibility of the approach is demonstrated by detecting low concentration hydrogen using thin CoPd films as the sensor material. The Hall effect sensitivity of the optimized samples exceeds 240% per 104 ppm at hydrogen concentrations below 0.5% in the hydrogen/nitrogen atmosphere, which is more than two orders of magnitude higher than the sensitivity of the conductance detection.

physics.app-ph

Scaling of the Hall effects beyond the quantum resistance threshold in oxidized CoFeB

The ordinary and the extraordinary Hall effects were studied in gradually oxidized amorphous CoFeB ferromagnets over six orders of resistivity from the metallic to the strongly insulating regime. Polarity of the extraordinary Hall effect reverses, and the amplitude of both the ordinary and the extraordinary Hall effects increases quadratically with resistivity when resistance exceeds the quantum resistance threshold. The absolute value of the extraordinary Hall effect scales linearly with the ordinary one in the entire range over eight orders of magnitude between the metallic and the insulating states. The behavior differs qualitatively and quantitatively from theoretically predicted and experimentally known in other materials.

cond-mat.str-el

The Mid-Infrared Luminosity Evolution and Luminosity Function of Quasars with SDSS and WISE

We determine the 22$μ$m luminosity evolution and luminosity function for quasars from a data set of over 20,000 objects obtained by combining flux-limited Sloan Digital Sky Survey optical and Wide field Infrared Survey Explorer mid-infrared data. We apply methods developed in previous works to access the intrinsic population distributions non-parametrically, taking into account the truncations and correlations inherent in the data. We find that the population of quasars exhibits positive luminosity evolution with redshift in the mid-infrared, but with considerably less mid-infrared evolution than in the optical or radio bands. With the luminosity evolutions accounted for, we determine the density evolution and local mid-infrared luminosity function. The latter displays a sharp flattening at local luminosities below $\sim 10^{31}$ erg sec$^{-1}$ Hz$^{-1}$, which has been reported previously at 15 $μ$m for AGN classified as both type-1 and type-2. We calculate the integrated total emission from quasars at 22 $μ$m and find it to be a small fraction of both the cosmic infrared background light and the integrated emission from all sources at this wavelength.

astro-ph.GA

Resistivity Minimum in Granular Composites and Thin Metallic Films

We analyze the temperature dependence of conductivity in thick granular ferromagnetic compounds NiSiO2 and in thin weakly coupled films of Fe, Ni and Py in vicinity of metal-insulator transition. Development of resistivity minimum followed by a logarithmic variation of conductivity at lower temperatures is attributed to granular structure of compounds and thin films fabricated by conventional deposition techniques. Resistivity minimum is identified as a transition between temperature dependent intra-granular metallic conductance and thermally activated inter-granular tunneling.

cond-mat.dis-nn

MegaOhm Extraordinary Hall effect in oxidized CoFeB

We report on development of controllably oxidized CoFeB ferromagnetic films demonstrating the extraordinary Hall effect (EHE) resistivity exceeding 1 Ohmcm and magnetic field sensitivity up to 10^6 Ohm/T. Such EHE resistivity is four orders of magnitude higher than previously observed in ferromagnetic materials, while sensitivity is two orders larger than the best of semiconductors

cond-mat.str-el

Absence of the Ordinary and Extraordinary Hall effects scaling in granular ferromagnets at metal-insulator transition

Universality of the extraordinary Hall effect scaling was tested in granular three-dimensional Ni-SiO2 films across the metal-insulator transition. Three types of magnetotransport behavior have been identified: metallic, weakly insulating and strongly insulating. Scaling between both the ordinary and extraordinary Hall effects and material resistivity is absent in the weakly insulating range characterized by logarithmic temperature dependence of conductivity. The results provide compelling experimental confirmation to recent models of granular metals predicting transition from logarithmic to exponential conductivity temperature dependence when inter-granular conductance drops below the quantum conductance value and loss of Hall effect scaling when inter-granular conductance is higher than the quantum one. The effect was found at high temperatures and reflects the granular structure of material rather than low temperature quantum corrections.

cond-mat.mtrl-sci

Dynamics of Successive Minor Hysteresis Loops

Cumulative growth of successive minor hysteresis loops in Co/Pd multilayers with perpendicular anisotropy was studied in the context of time dependent magnetization reversal dynamics. We show that in disordered ferromagnets, where magnetization reversal involves nucleation, domains' expansion and annihilation, differences between the time dependencies of these processes are responsible for accumulation of nuclei for rapid domain expansion, for the asymmetry of forward and backward magnetization reversals and for the respective cumulative growth of hysteresis loops. Loops stop changing and become macroscopically reproducible when populations of upward and downward nucleation domains balance each other and the respective upward and downward reversal times stabilize.

cond-mat.mtrl-sci

Sixteen-state magnetic memory based on the extraordinary Hall effect

We report on a proof-of-concept study of split-cell magnetic storage in which multi-bit magnetic memory cells are composed of several multilevel ferromagnetic dots with perpendicular magnetic anisotropy. Extraordinary Hall effect is used for reading the data. Feasibility of the approach is supported by realization of four-, eight- and sixteen- state cells.

cond-mat.str-el

Inhomogeneity and transverse voltage in superconductors

Voltages parallel and transverse to electric current in slightly inhomogeneous superconductors can contain components proportional to the field and temperature derivatives of the longitudinal and Hall resistivities. We show that these anomalous contributions can be the origin of the zero field and even-in-field transverse voltage occasionally observed at the superconductor to normal state transition. The same mechanism can also cause an anomaly in the odd-in-field transverse voltage interfering the Hall effect signal.

cond-mat.supr-con

Reversal of the extraordinary Hall effect polarity in thin Co/Pd multilayers

Thin Co/Pd multilayers, with room temperature perpendicular anisotropy and an enhanced surface scattering, were studied for the possible use in the extraordinary Hall effect (EHE) - based magnetic memory devices. Polarity of the EHE signal was found to change from negative in thick samples to positive in thin ones. Reversal of EHE sign was also observed in thick samples with aging. The effect is argued to be related to the dominance of surface scattering having the EHE polarity opposite to that of the bulk.

cond-mat.str-el

Asymmetric field dependence of magnetoresistance in magnetic films

We study an asymmetric in field magnetoresistance that is frequently observed in magnetic films and, in particular, the odd longitudinal voltage peaks that appear during magnetization reversal in ferromagnetic films, with out-of-plane magnetic anisotropy. We argue that the anomalous signals result from small variation of magnetization and Hall resistivity along the sample. Experimental data can be well described by a simple circuit model, the latter being supported by analytic and numerical calculations of current and electric field distribution in films with a gradual variation of the magnetization and Hall resistance.

cond-mat.str-el

Magnetization driven metal - insulator transition in strongly disordered Ge:Mn magnetic semiconductors

We report on the temperature and field driven metal-insulator transition in disordered Ge:Mn magnetic semiconductors accompanied by magnetic ordering, magnetoresistance reaching thousands of percents and suppression of the extraordinary Hall effect by a magnetic field. Magnetoresistance isotherms are shown to obey a universal scaling law with a single scaling parameter depending on temperature and fabrication. We argue that the strong magnetic disorder leads to localization of charge carriers and is the origin of the unusual properties of Ge:Mn alloys.

cond-mat.str-el

Perspective of spintronics applications based on the Extraordinary Hall Effect

Extraordinary Hall effect (EHE) is a spin-dependent phenomenon that generates voltage proportional to magnetization across a current carrying magnetic film. Magnitude of the effect can be artificially increased by stimulating properly selected spin-orbit scattering events. Already achieved sensitivity of the EHE-based sample devices exceeds 1000 Ohm/T, which surpasses the sensitivity of semiconducting Hall sensors. Linear field response, thermal stability, high frequency operation, sub-micron dimensions and, above all, simplicity, robustness and low cost manufacture are good reasons to consider a wide scale technological application of the phenomenon for magnetic sensors and memory devices.

cond-mat.str-el

Remarkable change of tunneling conductance in YBCO films in fields up to 32.4T

We studied the tunneling density of states in YBCO films under strong currents flowing along node directions. The currents were induced by fields of up to 32.4T parallel to the film surface and perpendicular to the $CuO_{2}$ planes. We observed a remarkable change in the tunneling conductance at high fields where the gap-like feature shifts discontinuously from 15meV to a lower bias of 11meV, becoming more pronounced as the field increases. The effect takes place in increasing fields around 9T and the transition back to the initial state occurs around 5T in decreasing fields. We argue that this transition is driven by surface currents induced by the applied magnetic field.

cond-mat.supr-con