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Electromagnetic manipulation for anti-Zeno effect in an engineered quantum tunneling process

Lan Zhou·F. M. Hu·Jing Lu·C. P. Sun
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Abstract

We investigate the quantum Zeno and anti-Zeno effects for the irreversible quantum tunneling from a quantum dot to a ring array of quantum dots. By modeling the total system with the Anderson-Fano-Lee model, it is found that the transition from the quantum Zeno effect to quantum anti-Zeno effect can happen as the magnetic flux and the gate voltage were adjusted.

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Lan Zhou, F. M. Hu, Jing Lu, C. P. Sun. 2006-09-01. Electromagnetic manipulation for anti-Zeno effect in an engineered quantum tunneling process. https://doi.org/10.1103/physreva.74.032102

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