Time dependence of the behaviour of silicon detectors in intense radiation fields and the role of primary point defects

Abstract

The bulk displacement damage in the detector, produces effects at the device level that limits the long time utilisation of detectors as position sensitive devices and thus the lifetime of detector systems. So, the prediction of time behaviour of detectors in hostile radiation environments represents a very useful tool. In this contribution we predict the time degradation of silicon detectors in the radiation environments expected in the LHC machine upgrade in luminosity and energy as SLHC, for detectors fabricated from silicon crystals obtained by different growth technologies, in the frame of the model developed by the authors, and which takes into account the contribution of primary defects.