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Design, fabrication and characterisation of InGaAs/InP single-photon avalanche diode detectors

Ryan E. Warburton·Sara Pellegrini·Lionel Tan·Jo Shien Ng·Andrey Krysa·Kris Groom·John P. R. David·Sergio Cova·Gerald S. Buller
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Abstract

This paper demonstrates the performance of planar geometry InGaAs/InP avalanche diodes, specifically designed and fabricated for Geiger-mode operation at wavelengths around 1550nm, in terms of dark count rate, single-photon detection efficiency, afterpulsing and photon-timing jitter.

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Ryan E. Warburton, Sara Pellegrini, Lionel Tan, Jo Shien Ng, Andrey Krysa, Kris Groom, John P. R. David, Sergio Cova, Gerald S. Buller. 2006-05-08. Design, fabrication and characterisation of InGaAs/InP single-photon avalanche diode detectors. https://arxiv.org/abs/physics/0605073

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