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Characterization of Prototype BTeV Silicon Pixel Sensors Before and After Irradiation

Maria R. Coluccia·J. A. Appel·G. Chiodini·D. C. Christian·S. Kwan
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Abstract

We report on measurements performed on silicon pixel sensor prototypes exposed to a 200 MeV proton beam at the Indiana University Cyclotron Facility. The sensors are of n+/n/p+ type with multi-guard ring structures on the p+-side and p-stop electrode isolation on the n+-side. Electrical characterization of the devices was performed before and after irradiation up to a proton fluence of 4E14 p/cm2. We tested pixel sensors fabricated from normal and oxygen-enriched silicon wafers and with two different p-stop isolation layouts: common p-stop and individual p-stop.

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Maria R. Coluccia, J. A. Appel, G. Chiodini, D. C. Christian, S. Kwan. 2002-04-08. Characterization of Prototype BTeV Silicon Pixel Sensors Before and After Irradiation. https://doi.org/10.1109/tns.2002.801710

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