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Internal Friction of Amorphous Silicon in a Magnetic Field

T. H. Metcalf·Xiao Liu·R. O. Pohl
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Abstract

The internal friction of e-beam amorphous silicon was measured in a magnetic field between 0 and 6 T, from 1.5-20 K, and was found to be independent of the field to better than 8%. It is concluded that the low energy excitations observed in this experiment are predominantly atomic in nature.

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T. H. Metcalf, Xiao Liu, R. O. Pohl. 1999-11-08. Internal Friction of Amorphous Silicon in a Magnetic Field. https://doi.org/10.1103/physrevb.61.9902

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