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Wavelength dependent negative and positive persistent photoconductivity in Sn delta-doped GaAs structures

V. A. Kulbachinskii·V. G. Kytin·A. V. Golikov·R. A. Lunin·R. T. F. van Schaijk·A. de Visser·A. P. Senichkin·A. S. Bugaev
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Abstract

The photoconductivity of GaAs structures delta-doped by Sn has been investigated for wavelengths lambda= 650-1200 nm in the temperature interval T= 4.2-300 K. The electron densities and mobilities, before and after illumination, have been determined by magnetoresistance, Shubnikov-de Haas effect and Hall effect measurements, in high magnetic fields. For the heavily doped structures (n_H> 2x10^13 cm^-2) we observe under illumination by light with wavelengths larger than the band-gap wavelength of the host material (lambda= 815 nm at T= 4.2 K) first positive (PPPC) and then negative (NPPC) persistent photoconductivity. The NPPC is attributed to the ionisation of DX centres and PPPC is explained by the excitation of electrons from Cr impurity states in the substrate. For lambda< 815 nm in addition the excitation of electron over the band gap of GaAs contributes to the PPPC. For the lightly doped structures (n_H<= 2x10^13 cm^-2) the photoconductivity effect is always positive.

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V. A. Kulbachinskii, V. G. Kytin, A. V. Golikov, R. A. Lunin, R. T. F. van Schaijk, A. de Visser, A. P. Senichkin, A. S. Bugaev. 2000-06-16. Wavelength dependent negative and positive persistent photoconductivity in Sn delta-doped GaAs structures. https://doi.org/10.1088/0268-1242%2F15%2F9%2F304

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