arXiv ScienceSearch

arXiv · cond-mat/9908360

Electronic Raman Scattering and Phonon Self-Energy Effects in the R-123 System: Signatures of Gap and Pseudogap

Abstract

Using Raman spectroscopy and transport measurements we investigate thin epitaxial films of Y{1-x}(Pr,Ca)xBa2Cu3O{6+y}. We explore the electronic Raman responses obtained after subtraction of phononic excitations, and the 2Delta peaks that form out of the electronic background below Tc. We find that the energy of the B1g 2Delta peak increases monotonically with decreasing doping until the peaks become unresolvable. In contrast, the peaks in A1g symmetry follow Tc being resolvable in the Pr-doped films. The B2g responses are weak and a 2Delta peak is only detected at the highest doping level. As a consequence of strong electron-phonon coupling, the B1g phonon at 340 cm^-1 exhibits a pronounced Fano-type line shape. We use a phenomenological model to describe the line shape that takes into account real and imaginary part of the electronic response. It allows us to obtain the self-energy corrections and the mass- enhancement factor lambda as a measure of the coupling. In the normal state we find lambda=0.015 around optimal doping and decreasing values with decreasing doping. The electron-phonon coupling increases strongly below T_c in overdoped samples in which the B1g 2Delta peaks appear in the vicinity of the phonon. Self-energy effects observed in the superconducting state can only partly be assigned to the redistributing electronic response. Anomalies with respect to frequency, linewidth, and intensity remain. They appear at increasing tempera- tures with decreasing doping and we provide evidence that they are connected to the presence of the pseudogap. We supplement our study by a comparison with single crystal data and investigate the influence of site-substitutional disorder on the electronic response and the electron-phonon interaction.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

A. Bock. 1999-08-25. Electronic Raman Scattering and Phonon Self-Energy Effects in the R-123 System: Signatures of Gap and Pseudogap. https://doi.org/10.1002/(sici)1521-3889(199909)8%3A6%3C441%3A%3Aaid-andp441%3E3.0.co%3B2-c

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Growth of superconducting boron doped diamond on 4inch silicon wafers

Superconducting boron-doped diamond (BDD) films were grown on 4-inch silicon wafers by microwave plasma chemical vapour deposition using gas-phase B/C ratios ranging from 6536 to 36421 ppm. Surface morphology, boron incorporation and superconducting properties were investigated as a function of gas-phase boron concentration. No systematic variation in apparent lateral grain size was observed across the series. Superconductivity was observed in all films except that grown at a B/C ratio of 6536 ppm within the measured temperature range down to 2 K. The superconducting transition temperature initially increased with increasing B/C ratio, reaching a maximum T$_c$ of 4.03 K at 24691 ppm, before decreasing at higher gas-phase B/C ratios. The corresponding resistive upper critical field at 2 K reached 3.091 T. Raman spectroscopy showed an increase in boron incorporation with increasing gas-phase B/C ratio up to 30303 ppm, followed by a slight decrease at 36421 ppm. Spatial measurements across the film grown at 24691 ppm showed T$_c$ values of 4.02, 4.19 and 3.33 K at the centre, intermediate and edge positions, respectively, with Raman spectroscopy showing a corresponding spatial variation in boron concentration. Comparison with previous growth on 2-inch wafers showed that substantially higher gas-phase B/C ratios were required to obtain comparable boron concentrations and superconducting properties on 4-inch wafers, indicating reduced boron incorporation efficiency during large-area growth. These results demonstrate the feasibility of producing superconducting BDD over a substantial area of a 4-inch silicon wafer while identifying boron incorporation and radial uniformity as key parameters for further wafer-scale optimisation.

cond-mat.supr-con

Multigap superconductivity in Ising superconductors: The case of (LaSe)1.14(NbSe2)m misfit layer compounds

Strong spin-orbit coupling and broken inversion symmetry in transition metal dichalcogenides give rise to Ising superconductivity, a spin-protected pairing state first identified in monolayer NbSe$_2$ through in-plane critical fields far exceeding the Pauli limit. More recently, Ising superconductivity has been proposed as a potential route to unconventional and even topological superconductivity in bulk misfit compounds. Here, we investigate the superconducting order parameter of layered misfit compounds composed of alternating transition metal dichalcogenide and rocksalt layers, which host extremely doped, electronically decoupled NbSe$_2$ sheets within a three-dimensional crystal. Using directional scanning tunneling spectroscopy on the misfit superconductors (LaSe)$_{1.14}$(NbSe$_2$) and (LaSe)$_{1.14}$(NbSe$_2$)$_2$, we uncover a strongly anisotropic multigap superconducting state: a fragile gap on the $Γ$-centered Fermi-surface pocket coexists with a robust, intrinsic gap on the K and K$'$ pockets. These features are in quantitative agreement with momentum-resolved gaps $Δ(\mathbf{k})$ obtained from anisotropic Migdal-Eliashberg calculations. The marked fragility of the $Γ$-centered gap, combined with the strong sensitivity of the critical temperature to non-magnetic disorder, points to pairing beyond conventional $s$-wave symmetry, potentially involving a topological order parameter. These results establish NbSe$_2$-based misfit compounds as a tunable bulk platform for multigap, unconventional superconductivity, with Ising protection offering a promising route toward topological pairing.

cond-mat.supr-con

Thermal Hall effect in elemental niobium, a two-gap superconductor

Niobium holds a pivotal place in superconductivity history: it is not only the elemental superconductor with the highest critical temperature, but also a long-standing candidate for multiband pairing whose evidence has remained controversial. A two-gap scenario was proposed as early as 1959, yet experimental proof stayed elusive. Here, through thermal Hall effect measurements, we unambiguously demonstrate a crossover in transverse thermal transport below $T_{\rm c}$, where the dominant carrier switches from hole-like to electron-like upon cooling. This crossover is a clear hallmark of two distinct superconducting condensates. Fitting our data to a two-gap Bardeen-Rickayzen-Tewordt (BRT) model yields a second energy gap of approximately 0.22 $k_{\rm B}T_{\rm c}$, only 11\% of the dominant gap. This small gap size accounts for the difficulty in resolving the two-gap structure in earlier experiments. Crucially, the temperature at which the electron-like contribution to longitudinal thermal conductivity begins to dominate coincides with the onset of the sign reversal in the thermal Hall coefficient, confirming consistency between the two methods, and providing crucial information on the assignment of the superconducting gaps to their respective hole- or electron-like Fermi surface sheets. These findings not only resolve a longstanding controversy, but also establish that multigap superconductivity is far more common than previously assumed, and demonstrate the thermal Hall effect as a powerful probe for resolving gap multiplicities in superconductors.

cond-mat.supr-con