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Frenkel-Kontorova Model of Vacancy-Line Interactions on Ga/Si(112): Formalism

S. C. Erwin·A. A. Baski·L. J. Whitman·R. E. Rudd
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Abstract

We describe in greater detail the exactly solvable microscopic model we have developed for analyzing the strain-mediated interaction of vacancy lines in a pseudomorphic adsorbate system (Phys. Rev. Lett., to appear). The model is applied to Ga/Si(112) by extracting values for the microscopic parameters from total-energy calculations. The results, which are in good agreement with experimental observations, reveal an unexpectedly complex interplay between compressive and tensile strain within the mixed Ga-Si surface layer.

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S. C. Erwin, A. A. Baski, L. J. Whitman, R. E. Rudd. 1999-07-12. Frenkel-Kontorova Model of Vacancy-Line Interactions on Ga/Si(112): Formalism. https://doi.org/10.1103/physrevlett.83.1818

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