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Multiple Andreev reflections in diffusive SNS structures

Rafael Taboryski·Jonatan Kutchinsky·Jorn Bindslev Hansen·Morten Wildt·Claus B. Sorensen·Poul Erik Lindelof
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Abstract

We report new measurements on sup-gap energy structure originating from multiple Andreev reflections in mesoscopic SNS junctions. The junctions were fabricated in a planar geometry with high transparency superconducting contacts of Al deposited on highly diffusive and surface d-doped n++-GaAs. For samples with a normal GaAs region of active length 0.3um the Josephson effect with a maximal supercurrent Ic=3mA at T=237mK was observed. The sub-gap structure was observed as a series of local minima in the differential resistance at dc bias voltages V=2D/ne with n=1,2,4 i.e. only the even sub-gap positions. While at V=2D/e (n=1) only one dip is observed, the n=2, and the n=4 sub-gap structures each consists of two separate dips in the differential resistance. The mutual spacing of these two dips is independent of temperature, and the mutual spacing of the n=4 dips is half of the spacing of the n=2 dips. The voltage bias positions of the sub-gap differential resistance minima coincide with the maxima in the oscillation amplitude when a magnetic field is applied in an interferometer configuration, where one of the superconducting electrodes has been replaced by a flux sensitive open loop.

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Rafael Taboryski, Jonatan Kutchinsky, Jorn Bindslev Hansen, Morten Wildt, Claus B. Sorensen, Poul Erik Lindelof. 1999-01-15. Multiple Andreev reflections in diffusive SNS structures. https://doi.org/10.1006/spmi.1999.0712

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