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Doping Dependent Density of States and Pseudogap Behavior in La2-xSrxCuO4

A. Ino·T. Mizokawa·K. Kobayashi·A. Fujimori·T. Sasagawa·T. Kimura·K. Kishio·K. Tamasaku·H. Eisaki·S. Uchida
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Abstract

We have made a high-resolution photoemission study of La2-xSrxCuO4 in a wide hole concentration (x) range from a heavily overdoped metal to an undoped insulator. As x decreases, the spectral density of states at the chemical potential (μ) is suppressed with an x-dependence similar to the suppression of the electronic specific heat coefficient. In the underdoped region, the spectra show a pseudogap structure on the energy scale of 0.1 eV. The width of the pseudogap increases with decreasing x following the x-dependence of the characteristic temperatures of the magnetic susceptibility and the Hall coefficient.

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A. Ino, T. Mizokawa, K. Kobayashi, A. Fujimori, T. Sasagawa, T. Kimura, K. Kishio, K. Tamasaku, H. Eisaki, S. Uchida. 1998-09-09. Doping Dependent Density of States and Pseudogap Behavior in La2-xSrxCuO4. https://doi.org/10.1103/physrevlett.81.2124

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