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Interface states in junctions of two semiconductors with intersecting dispersion curves

A. V. Kolesnikov·R. Lipperheide·A. P. Silin·U. Wille
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Abstract

A novel type of shallow interface state in junctions of two semiconductors without band inversion is identified within the envelope function approximation, using the two-band model. It occurs in abrupt junctions when the interband velocity matrix elements of the two semiconductors differ and the bulk dispersion curves intersect. The in-plane dispersion of the interface state is found to be confined to a finite range of momenta centered around the point of intersection. These states turn out to exist also in graded junctions, with essentially the same properties as in the abrupt case.

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A. V. Kolesnikov, R. Lipperheide, A. P. Silin, U. Wille. 1998-10-22. Interface states in junctions of two semiconductors with intersecting dispersion curves. https://doi.org/10.1209/epl%2Fi1998-00361-2

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