arXiv Science⌕ Search
Home/Archive/arXiv

arXiv · cond-mat/9803173

A quantitative theory of current-induced step bunching on Si(111)

Da-Jiang Liu·John D. Weeks
View original source ↗Read source document ↗Export metadata ↓

Abstract

We use a one-dimensional step model to study quantitatively the growth of step bunches on Si(111) surfaces induced by a direct heating current. Parameters in the model are fixed from experimental measurements near 900 deg C under the assumption that there is local mass transport through surface diffusion and that step motion is limited by the attachment rate of adatoms to step edges. The direct heating current is treated as an external driving force acting on each adatom. Numerical calculations show both qualitative and quantitative agreement with experiment. A force in the step down direction will destabilize the uniform step train towards step bunching. The average size of the step bunches grows with electromigration time as t^beta, with beta = 0.5, in agreement with experiment and with an analytical treatment of the steady states. The model is extended to include the effect of direct hopping of adatoms between different terraces. Monte-Carlo simulations of a solid-on-solid model, using physically motivated assumptions about the dynamics of surface diffusion and attachment at step edges, are carried out to study two dimensional features that are left out of the present step model and to test its validity. These simulations give much better agreement with experiment than previous work. We find a new step bending instability when the driving force is along the step edge direction. This instability causes the formation of step bunches and antisteps that is similar to that observed in experiment.

Explore related subjects

cond-mat.mtrl-scicond-mat.softcond-mat.stat-mech

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Da-Jiang Liu, John D. Weeks. 1998-03-13. A quantitative theory of current-induced step bunching on Si(111). https://doi.org/10.1103/physrevb.57.14891

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

arXiv2026

Impact of electron--spin coupling on exchange coupling parameters: a nonperturbative approach

Exchange coupling parameters $J_{ij}$ in the Heisenberg model are crucial for describing magnetic behavior at the atomic level. In magnetic materials, spin fluctuations can be accompanied by a self-consistent electronic response, i.e., electron--spin coupling in the sense of electronic feedback to finite spin rotations. However, the quantitative importance of this coupling in extracting reliable $J_{ij}$ has not been fully clarified. Here, using fully self-consistent, nonperturbative evaluations, we show that finite-angle spin rotations induce such electronic feedback and quantify how strongly it renormalizes the extracted $J_{ij}$. We examine systems of both fundamental and practical interest, including perovskite SrMnO$_3$, Nd-based permanent-magnet compounds (Nd$_2$Fe$_{14}$B and Nd$_2$Co$_{14}$B), and elemental 3$d$ transition metals. The nonperturbative approach yields exchange couplings that remain consistent over a wide range of rotation angles. Moreover, when the sampled configurations represent the magnetic disorder near the transition, spin models parameterized in this way give reasonable agreement with experimental magnetic phase-transition temperatures. Overall, our results demonstrate the quantitative impact of electron--spin coupling on the exchange coupling parameters $J_{ij}$ and provide a nonperturbative route to effective $J_{ij}$ for a specified regime of magnetic disorder.

cond-mat.mtrl-sci↗
arXiv2026

Benchmarking and advancing machine-learning interatomic potentials for 3C-SiC across equilibrium and extreme conditions

Several machine-learning interatomic potentials (MLIPs) have been developed for cubic silicon carbide (3C-SiC). Here, we benchmark seven existing MLIPs against a common set of structural, thermal, defect, radiation-damage, disordered-phase, and computational-performance tests. We also introduce two complementary MLIPs trained on DFT-labeled crystalline, liquid, amorphous, and defective configurations. TGAP, a Gaussian approximation potential based on the \verb|soap_turbo| descriptor, provides consistently high accuracy across the sampled configurational space. MTP, a custom moment tensor potential, retains good accuracy across these regimes while offering substantially lower computational cost, GPU acceleration, and access to multi-million-atom simulations. As an application-level test, both potentials remain stable in displacement cascades spanning short-range repulsion, transient disorder, and recrystallization. Overall, MTP emerges as a particularly strong accuracy--cost compromise for large-scale and strongly non-equilibrium simulations of 3C-SiC.

cond-mat.mtrl-sci↗
arXiv2026

Loss of altermagnetic order and smooth restoration of Kramers' spin degeneracy with increasing temperature in CrSb and MnTe

We describe how thermally induced spin fluctuations modify the electronic structures of two prototypical altermagnets, CrSb and MnTe, via application of the disordered local moment picture. For both materials, our self-consistent, ab initio calculations demonstrate that local magnetic moments persist on Cr and Mn atoms in their paramagnetic states, necessitating a spin-polarised description of the electronic structure even above the Néel temperature, $T_\mathrm{N}$. Moreover, Kramers' spin degeneracy, which is broken for both materials in their altermagnetic ground states, is shown to be smoothly restored - on the average - as the local moments thermally disorder. In metallic CrSb, this occurs at temperatures well below $T_\mathrm{N}$ and the signature effects of its altermagnetism are lost as the magnetic disorder induces heavy smearing of strongly dispersive electronic states around the Fermi energy. By contrast, in semiconducting MnTe, with its band gap largely unaffected by magnetic disorder, the spin degeneracy only returns at temperatures close to and above $T_\mathrm{N}$. We quantify the temperature dependence of the altermagnetic order parameter and the underlying electronic structures of both materials, with implications for their spin transport and spectroscopic properties.

cond-mat.mtrl-sci↗