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High Bias Transport and Magnetometer Design in Open Quantum Dots

M. Switkes·A. G. Huibers·C. M. Marcus·K. Campman·A. C. Gossard
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Abstract

We report transport measurements as a function of bias in open semiconductor quantum dots. These measurements are well described by an effective electron temperature derived from Joule heating at the point contacts and cooling by Wiedemann-Franz out-diffusion of thermal electrons. Using this model, we propose and analyze a quantum dot based sensor which measures absolute magnetic field at micron scales with a noise floor of $\sim 50 μϕ_{0} / \sqrt{Hz}$ at 300 mK.

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M. Switkes, A. G. Huibers, C. M. Marcus, K. Campman, A. C. Gossard. 1997-08-29. High Bias Transport and Magnetometer Design in Open Quantum Dots. https://doi.org/10.1063/1.120789

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