arXiv · cond-mat/9601136
Raman Response in Doped Antiferromagnets
Abstract
The resonant part of the $B_{1g}$ electronic Raman scattering response is calculated within the $t-J$ model on a planar lattice as a function of temperature and hole doping, using a finite-temperature diagonalization method for small systems. Results, directly applicable to experiments on cuprates, reveal on doping a very pronounced increase of the width of the two-magnon Raman peak, accompanied by a decrease of the total intensity. At the same time the peak position does not shift substantially in the underdoped regime.
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P. Prelovsek, J. Jaklic. 1996-03-07. Raman Response in Doped Antiferromagnets. https://doi.org/10.1103/physrevb.53.15095
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