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Experimental Evidence for a Coulomb Gap in Two Dimensions

Whitney Mason·S. V. Kravchenko·G. E. Bowker·J. E. Furneaux
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Abstract

We have studied the resistivity, $ρ$, of a two-dimensional electron system in silicon in the temperature range 200 mK < T < 7.5 K at zero magnetic field at low electron densities, when the electron system is in the insulating regime. Our results show that at an intermediate temperature range $ρ=ρ_0 exp[(T_0/T)^{1/2}]$ for at least four orders of magnitude up to 3x10^9 Ohms. This behavior is consistent with the existence of a Coulomb gap. Near the metal/insulator transition, the prefactor was found to be close to $h/e^2$, and resistivity scales with temperature. For very low electron densities, $n_s$, the prefactor diminishes with diminishing $n_s$. A comparison with the theory shows that a specific set of conditions are necessary to observe the behavior of resistivity consistent with the existence of the Coulomb gap.

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Whitney Mason, S. V. Kravchenko, G. E. Bowker, J. E. Furneaux. 1995-06-01. Experimental Evidence for a Coulomb Gap in Two Dimensions. https://doi.org/10.1103/physrevb.52.7857

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