Single layer/bilayer transition of electron systems in AlGaAs/GaAs/AlGaAs quantum wells subject to in-plane magnetic fields

Abstract

Equilibrium properties of electrons in double-heterojunction AlGaAs/GaAs\AlGaAs structures are investigated theoretically, using a full self-consistent numerical method. The transition from single to bilayer electron systems is discussed for the case of double-junction structures with varying distance between interfaces. In strong in-plane magnetic fields we observed the same type of transition accompanied by large effects on the energy spectra. A new fenomenon in bilayer systems - separability of the energy dispersion curve in parts corresponding to electrons either in first or second layer is analyzed in detail. The magnetic field induced variation in the effective distance between electron layers is compared to the constant layers separation in standard double-well structures. Due to relatively small and soft electrostatic barrier between interfaces we expect the van Hove singularity in the 2D density of states to be easier detectable than in double-well systems. The cyclotron mass, proportional to the density of states and characterizing the electron motion in tilted magnetic fields, is calculated as a function of in-plane magnetic field. The separability of the energy spectra resulting in tilted cyclotron orbits is demonstrated on a classical picture of an electron moving in crossed electric and magnetic fields.