Electronic Structure and Bonding in Epitaxially Stabilized Cubic Iron Silicides

K. A. Mader; H. von Kanel; A. Baldereschi

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arXiv · cond-mat/9305007

Electronic Structure and Bonding in Epitaxially Stabilized Cubic Iron Silicides

K. A. Mader·H. von Kanel·A. Baldereschi

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Abstract

We present an ab initio full-potential linearized augmented plane-wave (FLAPW) study of the structural and electronic properties of the two bulk unstable compounds FeSi (CsCl structure) and FeSi$_2$ (CaF$_2$ structure) which have recently been grown by molecular beam epitaxy on Si(111). We obtain equilibrium bulk lattice constants of 2.72 Å and 5.32 Å for FeSi and FeSi$_2$, respectively. The density of states (DOS) of FeSi agrees well with experiment, and shows metallic behavior. In agreement with a previous calculation the DOS of FeSi$_2$ shows a large density of $d$-states at the Fermi level, explaining the instability of the bulk phase. The electron charge distributions reveal a small charge transfer from Si to Fe atomic spheres in both compounds. While in FeSi the Fe-Si bond is indeed partially ionic, we show that in FeSi$_2$ the electron distribution corresponds to a covalent charge accumulation in the Fe-Si bond region. The reversed order of $d$-bands in FeSi with respect to FeSi$_2$ is understood in terms of crystal field splitting and Fe-Fe nearest neighbor $dd$-interactions in the CsCl structure, and a strong Si $p$/Fe $d$ bonding in the fluorite structure, respectively.

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K. A. Mader, H. von Kanel, A. Baldereschi. 1993-05-11. Electronic Structure and Bonding in Epitaxially Stabilized Cubic Iron Silicides. https://arxiv.org/abs/cond-mat/9305007

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