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Direct measurements of the fractional quantum Hall effect gaps

V. S. Khrapai·A. A. Shashkin·M. G. Trokina·V. T. Dolgopolov·V. Pellegrini·F. Beltram·G. Biasiol·L. Sorba
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Abstract

We measure the chemical potential jump across the fractional gap in the low-temperature limit in the two-dimensional electron system of GaAs/AlGaAs single heterojunctions. In the fully spin-polarized regime, the gap for filling factor nu=1/3 increases LINEARLY with magnetic field and is coincident with that for nu=2/3, reflecting the electron-hole symmetry in the spin-split Landau level. In low magnetic fields, at the ground-state spin transition for nu=2/3, a correlated behavior of the nu=1/3 and nu=2/3 gaps is observed.

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V. S. Khrapai, A. A. Shashkin, M. G. Trokina, V. T. Dolgopolov, V. Pellegrini, F. Beltram, G. Biasiol, L. Sorba. 2007-02-16. Direct measurements of the fractional quantum Hall effect gaps. https://doi.org/10.1103/physrevlett.99.086802

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