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Spin transport through a single self-assembled InAs quantum dot with ferromagnetic leads

K. Hamaya·S. Masubuchi·M. Kawamura·T. Machida·M. Jung·K. Shibata·K. Hirakawa·T. Taniyama·S. Ishida·Y. Arakawa
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Abstract

We have fabricated a lateral double barrier magnetic tunnel junction (MTJ) which consists of a single self-assembled InAs quantum dot (QD) with ferromagnetic Co leads. The MTJ shows clear hysteretic tunnel magnetoresistance (TMR) effect, which is evidence for spin transport through a single semiconductor QD. The TMR ratio and the curve shapes are varied by changing the gate voltage.

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K. Hamaya, S. Masubuchi, M. Kawamura, T. Machida, M. Jung, K. Shibata, K. Hirakawa, T. Taniyama, S. Ishida, Y. Arakawa. 2007-02-01. Spin transport through a single self-assembled InAs quantum dot with ferromagnetic leads. https://doi.org/10.1063/1.2435957

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