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Magneto-resistive memory in ferromagnetic (Ga,Mn)As nanostructures

T. Figielski·T. Wosinski·A. Morawski·A. Makosa·J. Wrobel·J. Sadowski
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Abstract

We show a novel magneto-resistive effect that appears in lithographically shaped, three-arm nanostructure, fabricated from ferromagnetic (Ga,Mn)As layers. The effect, related to a rearrangement of magnetic domain walls between different pairs of arms in the structure, reveals as a dependence of zero-field resistance on the direction of previously applied magnetic field. This effect could allow designing devices with unique switching and memory properties.

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T. Figielski, T. Wosinski, A. Morawski, A. Makosa, J. Wrobel, J. Sadowski. 2006-10-19. Magneto-resistive memory in ferromagnetic (Ga,Mn)As nanostructures. https://doi.org/10.1063/1.2435915

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