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Electrical control of optical orientation of neutral and negatively charged excitons in n-type semiconductor quantum well

R. I. Dzhioev·V. L. Korenev·M. V. Lazarev·V. F. Sapega·D. Gammon·A. S. Bracker
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Abstract

We report a giant electric field induced increase of spin orientation of excitons in n-type GaAs/AlGaAs quantum well. It correlates strongly with the formation of negatively charged excitons (trions) in the photoluminescence spectra. Under resonant excitation of neutral heavy-hole excitons, the polarization of excitons and trions increases dramatically with electrical injection of electrons within the narrow exciton-trion bias transition in the PL spectra, implying a polarization sensitivity of 200 % per Volt. This effect results from a very efficient trapping of neutral excitons by the quantum well interfacial fluctuations (so-called "natural" quantum dots) containing resident electrons.

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R. I. Dzhioev, V. L. Korenev, M. V. Lazarev, V. F. Sapega, D. Gammon, A. S. Bracker. 2006-09-14. Electrical control of optical orientation of neutral and negatively charged excitons in n-type semiconductor quantum well. https://doi.org/10.1103/physrevb.75.033317

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