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Quantum-size effect and tunneling magnetoresistance in ferromagnetic-semiconductor quantum heterostructures

S. Ohya·P. N. Hai·Y. Mizuno·M. Tanaka
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Abstract

We report on the resonant tunneling effect and the increase of tunneling magnetoresistance (TMR) induced by it in ferromagnetic-semiconductor GaMnAs quantum-well heterostructures. The observed quantum levels of the GaMnAs quantum well were successfully explained by the valence-band kp model with the p-d exchange interaction. It was also found that the Fermi level of the electrode injecting carriers is important to observe resonant tunneling in this system.

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S. Ohya, P. N. Hai, Y. Mizuno, M. Tanaka. 2006-08-16. Quantum-size effect and tunneling magnetoresistance in ferromagnetic-semiconductor quantum heterostructures. https://doi.org/10.1103/physrevb.75.155328

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