arXiv Science⌕ Search

arXiv · cond-mat/0607639

Very high frequency spectroscopy and tuning of a single-Cooper-pair-transistor with an on-chip generator

Abstract

We consider a single Cooper pair transistor (SCPT) coupled capacitively to a voltage biased Josephson junction, used as a high frequency generator. Thanks to the high energy of photons generated by the Josephson junction, transitions between energy levels, not limited to the first two levels, were induced and the effect of this irradiation on the DC Josephson current of the SCPT was measured. This allows to probe the phase and gate bias dependence of energy levels of the SCPT at high energy. Because the energies of photons can be higher than the superconducting gap we can induce not only transfer of Cooper pairs but also transfer of quasi-particles through the island of the SCPT, thus controlling the poisoning of the SCPT. We show that this can both decrease and increase the average Josephson energy of the SCPT : its supercurrent is then controlled by high-frequency

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

P. -M. Billangeon, F. Pierre, H. Bouchiat, R. Deblock. 2007-03-26. Very high frequency spectroscopy and tuning of a single-Cooper-pair-transistor with an on-chip generator. https://doi.org/10.1103/physrevlett.98.126802

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Mean-Field Study of Normal Metal-Quantum Dot-Superconductor System in the Presence of External Magnetic Field

In this paper, we have analyzed the spectral and transport properties of a weakly correlated single-level quantum dot hybridized with one normal conducting and another Bardeen-Cooper-Schrieffer (BCS) superconducting lead (N-QD-S system) in the presence of an external magnetic field. We have employed Green's function equation of motion (EOM) approach within a self-consistent Hartree-Fock (HF) mean-field approximation to analyze the Hamiltonian. We studied the effect of on-dot Coulomb correlation and an external magnetic field on the sub-gap Andreev levels of a quantum dot, strongly coupled to a conventional s-wave superconductor as a function of impurity parameters. We have shown that for a finite magnetic field, the Andreev bound states (ABSs) split into a spin-up and spin-down contribution (i.e. Zeeman splitting) and cross the Fermi energy level, resulting in a quantum phase transition, which is an indication of a change in the fermion parity of the ground state. Further, within the non-linear regime, we discuss the total electrical conductance for various values of Zeeman energy and on-dot Coulomb interactions. We have compared our results with the existing experimental and theoretical results.

cond-mat.mes-hall↗

Photoinduced topological phase transition in monolayer 1T$^\prime$-MoS$_2$

We investigate the systematic competition between perpendicular electric field and circularly polarized light in nonequilibrium topological phases of monolayer 1T$^\prime$--MoS$_2$ using a low-energy $k\!\cdot\!p$ Hamiltonian and Floquet theory. The off-resonant field generates spin- and valley-dependent mass corrections that reshape the Berry curvature (BC) and shift the conditions for band inversion. By evaluating the quasienergy bands, BC, and spin- valley-resolved Chern numbers, we identify a sequence of light and electric field controlled topological transitions by gap closing. Depending on the Floquet coupling strength and the electric-field parameter, the system evolves between the equilibrium quantum spin Hall (QSH) state and a set of driven phases including spin-polarized quantum Hall insulator (S-QHI), band insulator (BI) and photo-induced quantum Hall insulator (P-QHI) regimes. The results establish 1T$^\prime$--MoS$_2$ as a tunable platform where circular driving selectively manipulates spin and valley degrees of freedom, enabling controlled access to non-equilibrium topological phases in transition metal dichalcogenides (TMDs).

cond-mat.mes-hall↗

Engineering Fractional Topological Superconductors: Numerical Bogoliubov-de Gennes Analysis for Parafermion Realization in FCI-Superconductor Heterostructures

We propose a pathway to engineer Z3 parafermion zero modes in fractional Chern insulator-superconductor heterostructures. Using numerical Bogoliubov-de Gennes calculations and edge-theory analysis, we demonstrate how realistic materials such as MoTe2/NbSe2 can host parafermionic excitations with experimentally accessible signatures, including fractional Josephson effects, localized zero modes, interferometry, and thermal transport. Our work outlines concrete strategies for experimentally accessing parafermionic excitations in FCI-superconductor heterostructures.

cond-mat.mes-hall↗