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Ballistic transport in induced one-dimensional hole systems

O. Klochan·W. R. Clarke·R. Danneau·A. P. Micolich·L. H. Ho·A. R. Hamilton·K. Muraki·Y. Hirayama
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Abstract

We have fabricated and studied a ballistic one-dimensional p-type quantum wire using an undoped AlGaAs/GaAs heterostructure. The absence of modulation doping eliminates remote ionized impurity scattering and allows high mobilities to be achieved over a wide range of hole densities, and in particular, at very low densities where carrier-carrier interactions are strongest. The device exhibits clear quantized conductance plateaus with highly stable gate characteristics. These devices provide opportunities for studying spin-orbit coupling and interaction effects in mesoscopic hole systems in the strong interaction regime where rs > 10.

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O. Klochan, W. R. Clarke, R. Danneau, A. P. Micolich, L. H. Ho, A. R. Hamilton, K. Muraki, Y. Hirayama. 2006-07-20. Ballistic transport in induced one-dimensional hole systems. https://doi.org/10.1063/1.2337525

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