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Ab initio study of single molecular transistor modulated by gate-bias

F. Jiang·Y. X. Zhou·H. Chen·R. Note·H. Mizuseki·Y. Kawazoe
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Abstract

We use a self-consistent method to study the current of the single molecular transistor modulated by the transverse gate-bias in the level of the first-principles calculations. The numerical results show that both the polyacene-dithiol molecules and the fused-ring oligothiophene molecules are the potential high-frequency molecular transistor controlled by the transverse field. The long molecules of the polyacene-dithiol or the fused-ring thiophene are in favor of realizing the gate-bias controlled molecular transistor. The theoretical results suggest the related experiments.

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F. Jiang, Y. X. Zhou, H. Chen, R. Note, H. Mizuseki, Y. Kawazoe. 2006-05-06. Ab initio study of single molecular transistor modulated by gate-bias. https://doi.org/10.1063/1.2337286

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