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Ionized Impurity and Surface Roughness Scattering Rates of Electrons in Semiconductor Structures with One-Dimensional Electron Gas and Broadened Energy Levels

Dmitry Pozdnyakov·Vadim Galenchik·Vladimir Borzdov·Fadei Komarov·Oleg Zhevnyak
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Abstract

An approach to calculation of the ionized impurity and surface roughness scattering rates of electrons in very thin semiconductor quantum wires taking into account the energy level broadening is worked out. It is assumed that all the electrons in the structure are in the electric quantum limit. The screening is taken into account while considering the ionized impurity scattering. Comparison of the surface roughness scat-tering rates calculated using the exponential and Gaussian autocorrelation functions is done.

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Dmitry Pozdnyakov, Vadim Galenchik, Vladimir Borzdov, Fadei Komarov, Oleg Zhevnyak. 2006-04-06. Ionized Impurity and Surface Roughness Scattering Rates of Electrons in Semiconductor Structures with One-Dimensional Electron Gas and Broadened Energy Levels. https://arxiv.org/abs/cond-mat/0604177

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