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Voltage switching and domain relocation in semiconductor superlattices

L. L. Bonilla·R. Escobedo·G. Dell'Acqua
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Abstract

A numerical study of domain wall relocation during voltage switching with different ramping times is presented for weakly coupled, doped semiconductor superlattices exhibiting multistable domain formation in the first plateau of their current-voltage characteristics. Stable self-oscillations of the current at the end of stable stationary branches of the current-voltage characteristics have been found. These oscillations are due to periodic motion of charge dipoles near the cathode that disappear inside the SL, before they can reach the receiving contact. Depending on the dc voltage step, the type of multistability between static branches and the duration of voltage switching, unusual relocation scenarios are found including changes of the current that follow adiabatically the stable I--V branches, different faster episodes involving charge tripoles and dipoles, and even small amplitude oscillations of the current near the end of static I--V branches followed by dipole-tripole scenarios.

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L. L. Bonilla, R. Escobedo, G. Dell'Acqua. 2006-03-06. Voltage switching and domain relocation in semiconductor superlattices. https://doi.org/10.1103/physrevb.73.115341

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