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Non-activated transport of strongly interacting two-dimensional holes in GaAs

Jian Huang·D. S. Novikov·D. C. Tsui·L. N. Pfeiffer·K. W. West
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Abstract

We report on the transport measurements of two-dimensional holes in GaAs field effect transistors with record low densities down to 7*10^8 cm^{-2}. Remarkably, such a dilute system (with Fermi wavelength approaching 1 micrometer) exhibits a non-activated conductivity that grows with temperature following a power law. We contrast it with the activated transport obtained from measuring more disordered samples, and discuss possible transport mechanisms in this strongly-interacting regime.

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Jian Huang, D. S. Novikov, D. C. Tsui, L. N. Pfeiffer, K. W. West. 2006-10-11. Non-activated transport of strongly interacting two-dimensional holes in GaAs. https://doi.org/10.1103/physrevb.74.201302

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