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Hall coefficient and magnetoresistance of 2D spin-polarized electron systems

E. H. Hwang·S. Das Sarma
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Abstract

Recent measurements of the 2D Hall resistance show that the Hall coefficient is independent of the applied in-plane magnetic field, i.e., the spin-polarization of the system. We calculate the weak-field Hall coefficient and the magnetoresistance of a spin polarized 2D system using the semi-classical transport approach based on the screening theory. We solve the coupled kinetic equations of the two carrier system including electron-electron interaction. We find that the in-plane magnetic field dependence of the Hall coefficient is suppressed by the weakening of screening and the electron-electron interaction. However, the in-plane magnetoresistance is mostly determined by the change of the screening of the system, and can therefore be strongly field dependent.

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E. H. Hwang, S. Das Sarma. 2006-01-11. Hall coefficient and magnetoresistance of 2D spin-polarized electron systems. https://doi.org/10.1103/physrevb.73.121309

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