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Metal-Semiconductor Transition and Fermi Velocity Renormalization in Metallic Carbon Nanotubes

Yan Li·Slava V. Rotkin·Umberto Ravaioli
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Abstract

Angular perturbations modify the band structure of armchair (and other metallic) carbon nanotubes by breaking the tube symmetry and may induce a metal-semiconductor transition when certain selection rules are satisfied. The symmetry requirements apply for both the nanotube and the perturbation potential, as studied within a nonorthogonal $π$-orbital tight-binding method. Perturbations of two categories are considered: an on-site electrostatic potential and a lattice deformation which changes the off-site hopping integrals. Armchair nanotubes are proved to be robust against the metal-semiconductor transition in second-order perturbation theory due to their high symmetry, but can develop a nonzero gap by extending the perturbation series to higher orders or by combining potentials of different types. An assumption of orthogonality between $π$ orbitals is shown to lead to an accidental electron-hole symmetry and extra selection rules that are weakly broken in the nonorthogonal theory. These results are further generalized to metallic nanotubes of arbitrary chirality.

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Yan Li, Slava V. Rotkin, Umberto Ravaioli. 2005-11-16. Metal-Semiconductor Transition and Fermi Velocity Renormalization in Metallic Carbon Nanotubes. https://doi.org/10.1103/physrevb.73.035415

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