Effects of strain, electric, and magnetic fields on lateral electron spin transport in semiconductor epilayers

Abstract

We construct a spin-drift-diffusion model to describe spin-polarized electron transport in zincblende semiconductors in the presence of magnetic fields, electric fields, and off-diagonal strain. We present predictions of the model for geometries that correspond to optical spin injection from the absorption of circularly polarized light, and for geometries that correspond to electrical spin injection from ferromagnetic contacts. Starting with the Keldysh Green's function description for a system driven out of equilibrium, we construct a semiclassical kinetic theory of electron spin transport in strained semiconductors in the presence of electric and magnetic fields. From this kinetic theory we derive spin-drift-diffusion equations for the components of the spin density matrix for the specific case of spatially uniform fields and uniform electron density. We solve the spin-drift-diffusion equations numerically and compare the resulting images with scanning Kerr microscopy data of spin-polarized conduction electrons flowing laterally in bulk epilayers of n-type GaAs. The spin-drift-diffusion model accurately describes the experimental observations. We contrast the properties of electron spin precession resulting from magnetic and strain fields. Spin-strain coupling depends linearly on electron wave vector and spin-magnetic field coupling is independent of electron wave vector. As a result, spatial coherence of precessing spin flows is better maintained with strain than with magnetic fields, and the spatial period of spin precession is independent of the applied electrical bias in strained structures whereas it is strongly bias dependent for the case of applied magnetic fields.