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Electronic structure and anisotropic transport properties in hexagonal YPtIn and LuAgGe ternary compounds

G. D. Samolyuk·S. L. Bud'ko·E. Morosan·V. P. Antropov·P. C. Canfield
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Abstract

We present anisotropic, zero applied magnetic field, temperature dependent resistivity measurements on hexagonal, non-magnetic, YPtIn and LuAgGe single crystals. For these materials the in-plane resistivity, $ρ_{ab}$, is significantly higher than the $c$ - axis one, $ρ_c$, with $ρ_{ab}/ρ_c \approx 1.4$ for YPtIn and $\approx 4.2 - 4.7$ for LuAgGe. The connection between the electronic structure and the anisotropic transport properties is discussed using density functional calculations that link the observed anisotropy with a specific shape of Fermi surface and anisotropy of the Fermi velocities.

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G. D. Samolyuk, S. L. Bud'ko, E. Morosan, V. P. Antropov, P. C. Canfield. 2005-08-15. Electronic structure and anisotropic transport properties in hexagonal YPtIn and LuAgGe ternary compounds. https://doi.org/10.1088/0953-8984%2F18%2F4%2F030

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