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Resistivity memory effect in La(1-x)Sr(x)MnO(3)

E. P. Khlybov·R. A. Sadykov·I. J. Kostyleva·W. I. Nizhankovskij·A. J. Zaleski·D. Wlosewicz·A. W. Giulitin
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Abstract

During the study of magnetoresistivity in La(1-x)Ca(x)MnO(3) it was found that after cycling of the magnetic field, some kind of magnetic field memory effect was observed. For La0.5Ca0.5MnO3 after cycling of the magnetic field to 13T and back to zero, "frozen" magnetoresistivity decreases about 20 times comparing to zero field value, while for La(0.47)Ca(0.53)MnO(3) it is already about four orders of magnitude. This effect can be observed only for concentration region 0.45 < x < 0.55. In zero magnetic field, temperature dependence of resistivity ro(T) shows semiconducting-like behavior, while after magnetic field cycling it becomes metal-like. So it looks as we are dealing with magnetic field induced semiconductor (or dielectric) to metal transition. Such effect can be explained within phase-separation picture. In zero magnetic field material consists of antiferromagnetic matrix (insulating phase) and coexisting ferromagnetic, conducting phase. Magnetic field application causes ferromagnetic phase to form some kind of conducting channels which shunts semiconducting matrix phase. Such structure is preserved after reduction of magnetic field, leaving the material conducting.

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E. P. Khlybov, R. A. Sadykov, I. J. Kostyleva, W. I. Nizhankovskij, A. J. Zaleski, D. Wlosewicz, A. W. Giulitin. 2005-07-03. Resistivity memory effect in La(1-x)Sr(x)MnO(3). https://arxiv.org/abs/cond-mat/0507018

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