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Controlled single electron transfer between Si:P dots

T. M. Buehler·V. Chan·A. J. Ferguson·A. S. Dzurak·F. E. Hudson·D. J. Reilly·A. R. Hamilton·R. G. Clark·D. N. Jamieson·C. Yang·C. I. Pakes·S. Prawer
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Abstract

We demonstrate electrical control of Si:P double dots in which the potential is defined by nanoscale phosphorus doped regions. Each dot contains approximately 600 phosphorus atoms and has a diameter close to 30 nm. On application of a differential bias across the dots, electron transfer is observed, using single electron transistors in both dc- and rf-mode as charge detectors. With the possibility to scale the dots down to few and even single atoms these results open the way to a new class of precision-doped quantum dots in silicon.

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T. M. Buehler, V. Chan, A. J. Ferguson, A. S. Dzurak, F. E. Hudson, D. J. Reilly, A. R. Hamilton, R. G. Clark, D. N. Jamieson, C. Yang, C. I. Pakes, S. Prawer. 2006-02-21. Controlled single electron transfer between Si:P dots. https://doi.org/10.1063/1.2203740

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