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Fabrication and Characterization of Electrostatic Quantum Dots in a Si/SiGe 2D Electron Gas, Including an Integrated Read-out Channel

M. R. Sakr·E. Yablonovitch·E. T. Croke·H. W. Jiang
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Abstract

A new fabrication technique is used to produce quantum dots with read-out channels in silicon/silicon-germanium two-dimensional electron gases. The technique utilizes Schottky gates, placed on the sides of a shallow etched quantum dot, to control the electronic transport process. An adjacent quantum point contact gate is integrated to the side gates to define a read-out channel and thus allow for noninvasive detection of the electronic occupation of the quantum dot. Reproducible and stable Coulomb oscillations and the corresponding jumps in the read-out channel resistance are observed at low temperatures. The fabricated dot combined with the read-out channel represent a step towards the spin-based quantum bit in Si/SiGe heterostructures.

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M. R. Sakr, E. Yablonovitch, E. T. Croke, H. W. Jiang. 2005-04-04. Fabrication and Characterization of Electrostatic Quantum Dots in a Si/SiGe 2D Electron Gas, Including an Integrated Read-out Channel. https://doi.org/10.1063/1.2136436

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