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Acoustic phonon scattering in a low density, high mobility AlGaN/GaN field effect transistor

E. A. Henriksen·S. Syed·Y. Ahmadian·M. J. Manfra·K. W. Baldwin·A. M. Sergent·R. J. Molnar·H. L. Stormer
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Abstract

We report on the temperature dependence of the mobility, $μ$, of the two-dimensional electron gas in a variable density AlGaN/GaN field effect transistor, with carrier densities ranging from 0.4$\times10^{12}$ cm$^{-2}$ to 3.0$\times10^{12}$ cm$^{-2}$ and a peak mobility of 80,000 cm$^{2}$/Vs. Between 20 K and 50 K we observe a linear dependence $μ_{ac}^{-1} = α$T indicating that acoustic phonon scattering dominates the temperature dependence of the mobility, with $α$ being a monotonically increasing function of decreasing 2D electron density. This behavior is contrary to predictions of scattering in a degenerate electron gas, but consistent with calculations which account for thermal broadening and the temperature dependence of the electron screening. Our data imply a deformation potential D = 12-15 eV.

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E. A. Henriksen, S. Syed, Y. Ahmadian, M. J. Manfra, K. W. Baldwin, A. M. Sergent, R. J. Molnar, H. L. Stormer. 2005-03-27. Acoustic phonon scattering in a low density, high mobility AlGaN/GaN field effect transistor. https://doi.org/10.1063/1.1954893

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