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High Performance N-Type Carbon Nanotube Field Effect Transistors with Chemically Doped Contacts

Ali Javey·Ryan Tu·Damon Farmer·Jing Guo·Roy Gordon·Hongjie Dai
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Abstract

Short channel (~80 nm) n-type single-walled carbon nanotube (SWNT) field-effect transistors (FETs) with potassium (K) doped source and drain regions and high-k gate dielectrics (ALD HfO2) are obtained. For nanotubes with diameter ~ 1.6 nm and bandgap ~ 0.55 eV, we obtain n-MOSFET-like devices exhibiting high on-currents due to chemically suppressed Schottky barriers at the contacts, subthreshold swing of 70mV/decade, negligible ambipolar conduction and high on/off ratios up to 10^6 at a bias voltage of 0.5V. The results compare favorably with the state-of-the-art silicon n-MOSFETs and demonstrate the potential of SWNTs for future complementary electronics. The effects of doping level on the electrical characteristics of the nanotube devices are discussed.

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Ali Javey, Ryan Tu, Damon Farmer, Jing Guo, Roy Gordon, Hongjie Dai. 2005-01-06. High Performance N-Type Carbon Nanotube Field Effect Transistors with Chemically Doped Contacts. https://doi.org/10.1021/nl047931j

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