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Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers

V. Osinniy·K. Dybko·A. Jedrzejczak·M. Arciszewska·W. Dobrowolski·T. Story·M. V. Radchenko·V. I. Sichkovskiy·G. V. Lashkarev·S. M. Olsthoorn·J. Sadowski
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Abstract

Thermoelectric power, electrical conductivity, and high field Hall effect were studied over a broad temperature range in ferromagnetic Ga(1-x)Mn(x)As epitaxial layers (0.015 70 K) the thermoelectric power in GaMnAs linearly increases with increasing temperature. That indicates the presence of a degenerate hole gas with the Fermi energy EF=220+-25 meV, nearly independent of Mn content (for 0.02<x<0.05). At lower temperatures GaMnAs layers with metallic-type conductivity show an additional contribution to the thermoelectric power with the maximum close to the Curie temperature. The layers exhibiting insulating electrical properties show 1/T-type increase of thermoelectric power at low temperatures.

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V. Osinniy, K. Dybko, A. Jedrzejczak, M. Arciszewska, W. Dobrowolski, T. Story, M. V. Radchenko, V. I. Sichkovskiy, G. V. Lashkarev, S. M. Olsthoorn, J. Sadowski. 2004-09-24. Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers. https://arxiv.org/abs/cond-mat/0409659

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