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Fabrication of GaNxAs1-x Quantum Structures by Focused Ion Beam Patterning

K. Alberi·A. Minor·M. A. Scarpulla·S. J. Chung·D. E. Mars·K. M. Yu·W. Walukiewicz·O. D. Dubon
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Abstract

A novel approach to the fabrication of GaNxAs1-x quantum dots and wires via ion beam patterning is presented. Photomodulated reflectance spectra confirm that N can be released from the As sublattice of an MBE-grown GaNxAs1-x film by amorphization through ion implantation followed by regrowth upon rapid thermal annealing (RTA). Amorphization may be achieved with a focused ion beam (FIB), which is used to implant Ga ions in patterned lines such that annealing produces GaAs regions within a GaNxAs1-x film. The profiles of these amorphized lines are dependent upon the dose implanted, and the film reaches a damage threshold during RTA due to excess Ga. By altering the FIB implantation pattern, quantum dots or wires may be fabricated.

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K. Alberi, A. Minor, M. A. Scarpulla, S. J. Chung, D. E. Mars, K. M. Yu, W. Walukiewicz, O. D. Dubon. 2004-08-02. Fabrication of GaNxAs1-x Quantum Structures by Focused Ion Beam Patterning. https://doi.org/10.1063/1.1994074

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