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Formation of atom wires on vicinal silicon

C. Gonzalez·P. C. Snijders·J. Ortega·R. Perez·F. Flores·S. Rogge·H. H. Weitering
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Abstract

The formation of atomic wires via pseudomorphic step-edge decoration on vicinal silicon surfaces has been analyzed for Ga on the Si(112) surface using Scanning Tunneling Microscopy and Density Functional Theory calculations. Based on a chemical potential analysis involving more than thirty candidate structures and considering various fabrication procedures, it is concluded that pseudomorphic growth on stepped Si(112), both under equilibrium and non-equilibrium conditions, must favor formation of Ga zig-zag chains rather than linear atom chains. The surface is non-metallic and presents quasi-one dimensional character in the lowest conduction band.

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C. Gonzalez, P. C. Snijders, J. Ortega, R. Perez, F. Flores, S. Rogge, H. H. Weitering. 2004-04-13. Formation of atom wires on vicinal silicon. https://doi.org/10.1103/physrevlett.93.126106

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