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Atom Chips: Fabrication and Thermal Properties

S. Groth·P. Krüger·S. Wildermuth·R. Folman·T. Fernholz·D. Mahalu·I. Bar-Joseph·J. Schmiedmayer
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Abstract

Neutral atoms can be trapped and manipulated with surface mounted microscopic current carrying and charged structures. We present a lithographic fabrication process for such atom chips based on evaporated metal films. The size limit of this process is below 1$μ$m. At room temperature, thin wires can carry more than 10$^7$A/cm$^2$ current density and voltages of more than 500V. Extensive test measurements for different substrates and metal thicknesses (up to 5 $μ$m) are compared to models for the heating characteristics of the microscopic wires. Among the materials tested, we find that Si is the best suited substrate for atom chips.

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S. Groth, P. Krüger, S. Wildermuth, R. Folman, T. Fernholz, D. Mahalu, I. Bar-Joseph, J. Schmiedmayer. 2004-04-06. Atom Chips: Fabrication and Thermal Properties. https://doi.org/10.1063/1.1804601

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