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Field-Induced Resistive Switching in Metal-Oxide Interfaces

S. Tsui·A. Baikalov·J. Cmaidalka·Y. Y. Sun·Y. Q. Wang·Y. Y. Xue·C. W. Chu·L. Chen·A. J. Jacobson
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Abstract

We investigate the polarity-dependent field-induced resistive switching phenomenon driven by electric pulses in perovskite oxides. Our data show that the switching is a common occurrence restricted to an interfacial layer between a deposited metal electrode and the oxide. We determine through impedance spectroscopy that the interfacial layer is no thicker than 10 nm and that the switch is accompanied by a small capacitance increase associated with charge accumulation. Based on interfacial I-V characterization and measurement of the temperature dependence of the resistance, we propose that a field-created crystalline defect mechanism, which is controllable for devices, drives the switch.

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S. Tsui, A. Baikalov, J. Cmaidalka, Y. Y. Sun, Y. Q. Wang, Y. Y. Xue, C. W. Chu, L. Chen, A. J. Jacobson. 2004-02-27. Field-Induced Resistive Switching in Metal-Oxide Interfaces. https://doi.org/10.1063/1.1768305

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